Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits

Liu Liu; Yunhong Ding; Kresten Yvind; Jørn Märcher Hvam

doi:10.1364/OE.19.012646

Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits

Liu Liu, Yunhong Ding, Kresten Yvind, Jørn Märcher Hvam

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Abstract

A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also simple, consisting of only two parallel silicon-on-insulator wire waveguides with different widths, and thus requiring no additional and nonstandard fabrication steps. A total insertion loss of -0.6dB and an extinction ratio of 12dB have been obtained experimentally in the whole C-band.

Original language	English
Journal	Optics Express
Volume	19
Issue number	13
Pages (from-to)	12646-12651
ISSN	1094-4087
DOIs	https://doi.org/10.1364/OE.19.012646
Publication status	Published - 2011

Bibliographical note

This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/abstract.cfm?URI=oe-19-13-12646. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

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title = "Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits",

abstract = "A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also simple, consisting of only two parallel silicon-on-insulator wire waveguides with different widths, and thus requiring no additional and nonstandard fabrication steps. A total insertion loss of -0.6dB and an extinction ratio of 12dB have been obtained experimentally in the whole C-band.",

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note = "This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/abstract.cfm?URI=oe-19-13-12646. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.",

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AU - Ding, Yunhong

AU - Yvind, Kresten

AU - Hvam, Jørn Märcher

N1 - This paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://www.opticsinfobase.org/abstract.cfm?URI=oe-19-13-12646. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.

PY - 2011

Y1 - 2011

N2 - A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also simple, consisting of only two parallel silicon-on-insulator wire waveguides with different widths, and thus requiring no additional and nonstandard fabrication steps. A total insertion loss of -0.6dB and an extinction ratio of 12dB have been obtained experimentally in the whole C-band.

AB - A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarization diversity circuit. The device is compact, with a total length of a few tens of microns. It is also simple, consisting of only two parallel silicon-on-insulator wire waveguides with different widths, and thus requiring no additional and nonstandard fabrication steps. A total insertion loss of -0.6dB and an extinction ratio of 12dB have been obtained experimentally in the whole C-band.

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DO - 10.1364/OE.19.012646

M3 - Journal article

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JO - Optics Express

JF - Optics Express

IS - 13

ER -

Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits

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