Silicon nanostructures produced by laser direct etching

Matthias Müllenborn, Paul Andreas Holger Dirac, Jon Wulff Petersen

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    Abstract

    A laser direct-write process has been applied to structure silicon on a nanometer scale. In this process, a silicon substrate, placed in a chlorine ambience, is locally heated above its melting point by a continuous-wave laser and translated by high-resolution direct-current motor stages. Only the molten silicon reacts spontaneously with the molecular chlorine, resulting in trenches with the width of the laser-generated melt. Trenches have been etched with a width of less than 70 nm. To explain the functional dependence of the melt size on absorbed power, the calculations based on a two-phase steady state heat model are presented, taking the temperature-dependent thermal conductivities and optical parameters into account. ©1995 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume66
    Issue number22
    Pages (from-to)3001-3003
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1995

    Bibliographical note

    Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics

    Keywords

    • LIQUID SILICON

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