Silicon doped InP as an alternative plasmonic material for mid-infrared

Mohammad Esmail Aryaee Panah; Li Han; Dennis Valbjørn Christensen; Nini Pryds; Andrei Lavrinenko; Elizaveta Semenova

doi:10.1109/IRMMW-THz.2016.7758994

Silicon doped InP as an alternative plasmonic material for mid-infrared

Mohammad Esmail Aryaee Panah
, Li Han
, Dennis Valbjørn Christensen
, Nini Pryds
, Andrei Lavrinenko
, Elizaveta Semenova

Department of Energy Conversion and Storage

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection spectra of the samples with different carrier concentrations are used to retrieve pertaining dielectric functions as the key factor for understanding plasmonic behavior of InP:Si in the mid-IR wavelength range.

Original language	English
Title of host publication	Proceedings of 41st International Conference on Infrared, Millimeter and Terahertz Waves
Number of pages	2
Publisher	IEEE
Publication date	2016
ISBN (Electronic)	978-1-4673-8485-8
DOIs	https://doi.org/10.1109/IRMMW-THz.2016.7758994
Publication status	Published - 2016
Event	2016 International Conference on Infrared, Millimeter and Terahertz Waves - Bella Center, Copenhagen, Denmark Duration: 25 Sept 2016 → 30 Sept 2016

Conference

Conference	2016 International Conference on Infrared, Millimeter and Terahertz Waves
Location	Bella Center
Country/Territory	Denmark
City	Copenhagen
Period	25/09/2016 → 30/09/2016

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10.1109/IRMMW-THz.2016.7758994

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title = "Silicon doped InP as an alternative plasmonic material for mid-infrared",

abstract = "Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection spectra of the samples with different carrier concentrations are used to retrieve pertaining dielectric functions as the key factor for understanding plasmonic behavior of InP:Si in the mid-IR wavelength range.",

author = "Panah, \{Mohammad Esmail Aryaee\} and Li Han and Christensen, \{Dennis Valbj{\o}rn\} and Nini Pryds and Andrei Lavrinenko and Elizaveta Semenova",

year = "2016",

doi = "10.1109/IRMMW-THz.2016.7758994",

language = "English",

booktitle = "Proceedings of 41st International Conference on Infrared, Millimeter and Terahertz Waves",

publisher = "IEEE",

address = "United States",

note = "2016 International Conference on Infrared, Millimeter and Terahertz Waves, irmmwthz2016 ; Conference date: 25-09-2016 Through 30-09-2016",

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Panah, MEA, Han, L, Christensen, DV , Pryds, N , Lavrinenko, A & Semenova, E 2016, Silicon doped InP as an alternative plasmonic material for mid-infrared. in Proceedings of 41st International Conference on Infrared, Millimeter and Terahertz Waves. IEEE, 2016 International Conference on Infrared, Millimeter and Terahertz Waves, Copenhagen, Denmark, 25/09/2016. https://doi.org/10.1109/IRMMW-THz.2016.7758994

Silicon doped InP as an alternative plasmonic material for mid-infrared. / Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn et al.
Proceedings of 41st International Conference on Infrared, Millimeter and Terahertz Waves. IEEE, 2016.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Silicon doped InP as an alternative plasmonic material for mid-infrared

AU - Panah, Mohammad Esmail Aryaee

AU - Han, Li

AU - Christensen, Dennis Valbjørn

AU - Pryds, Nini

AU - Lavrinenko, Andrei

AU - Semenova, Elizaveta

PY - 2016

Y1 - 2016

N2 - Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection spectra of the samples with different carrier concentrations are used to retrieve pertaining dielectric functions as the key factor for understanding plasmonic behavior of InP:Si in the mid-IR wavelength range.

AB - Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection spectra of the samples with different carrier concentrations are used to retrieve pertaining dielectric functions as the key factor for understanding plasmonic behavior of InP:Si in the mid-IR wavelength range.

U2 - 10.1109/IRMMW-THz.2016.7758994

DO - 10.1109/IRMMW-THz.2016.7758994

M3 - Article in proceedings

BT - Proceedings of 41st International Conference on Infrared, Millimeter and Terahertz Waves

PB - IEEE

T2 - 2016 International Conference on Infrared, Millimeter and Terahertz Waves

Y2 - 25 September 2016 through 30 September 2016

ER -

Silicon doped InP as an alternative plasmonic material for mid-infrared

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