Silicon doped InP as an alternative plasmonic material for mid-infrared

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Abstract

Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection spectra of the samples with different carrier concentrations are used to retrieve pertaining dielectric functions as the key factor for understanding plasmonic behavior of InP:Si in the mid-IR wavelength range.
Original languageEnglish
Title of host publicationProceedings of 41st International Conference on Infrared, Millimeter and Terahertz Waves
Number of pages2
PublisherIEEE
Publication date2016
ISBN (Electronic)978-1-4673-8485-8
DOIs
Publication statusPublished - 2016
EventInternational Conference on Infrared, Millimeter and Terahertz Waves - Bella Center, Copenhagen, Denmark
Duration: 25 Sep 201630 Sep 2016

Conference

ConferenceInternational Conference on Infrared, Millimeter and Terahertz Waves
LocationBella Center
CountryDenmark
CityCopenhagen
Period25/09/201630/09/2016

Cite this

Panah, M. E. A., Han, L., Christensen, D. V., Pryds, N., Lavrinenko, A., & Semenova, E. (2016). Silicon doped InP as an alternative plasmonic material for mid-infrared. In Proceedings of 41st International Conference on Infrared, Millimeter and Terahertz Waves IEEE. https://doi.org/10.1109/IRMMW-THz.2016.7758994