Silicon based nanogap device for investigating electronic transport through 12 nm long oligomers

S. Strobel, E. Albert, G. Csaba, P. Lugli, Roar R. Søndergaard, Eva Bundgaard, Kion Norrman, Frederik C Krebs, A.G. Hansen, M. Tornow

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    We have fabricated vertical nanogap electrode devices based on Silicon-on-Insulator (SOI) substrates for investigating the electronic transport properties of long, conjugated molecular wires. Our nanogap electrode devices comprise smooth metallic contact pairs situated at the sidewall of an SOI structure, obtained by selective recess-etching a few nanometers thin buried oxide layer and subsequent thin film metallization. The electrodes are separated by a predetermined distance down to about 5 nm and feature a well-tailored material layer structure, as characterized by SEM and scanning TEM analysis. We studied the electronic transport properties of 12 nm long, specifically synthesized dithiolated oligo-phenylene-vinylene derivatives assembled onto the electrode gap from solution. In particular, we observed a pronounced, non-linear current-voltage characteristic featuring a large conductance gap up to approx. ±1.5 V. The occurrence of this gap can be assigned to energetic barriers originating from short conjugation-breaking linker groups at the termini of the molecule. Model calculations that involve Density Functional Theory (DFT) and Non Equilibrium Green's Function (NEGF) methods agree qualitatively well with the data. © 2009 IEEE NANO Organizers.
    Original languageEnglish
    Title of host publication9th IEEE Conference on Nanotechnology, IEEE NANO 2009
    PublisherIEEE Computer Society Press
    Publication date2009
    Pages83-85
    ISBN (Print)978-981-08-3694-8
    Publication statusPublished - 2009
    Event9th IEEE Conference on Nanotechnology - genoa, Italy
    Duration: 26 Jul 200930 Jul 2009
    Conference number: 9

    Conference

    Conference9th IEEE Conference on Nanotechnology
    Number9
    CountryItaly
    Citygenoa
    Period26/07/200930/07/2009

    Keywords

    • Aromatic compounds
    • Green's function
    • Metallic compounds
    • Microsensors
    • Molecular electronics
    • Nanotechnology
    • Oligomers
    • Scanning electron microscopy
    • Transport properties
    • Density functional theory

    Cite this

    Strobel, S., Albert, E., Csaba, G., Lugli, P., Søndergaard, R. R., Bundgaard, E., Norrman, K., Krebs, F. C., Hansen, A. G., & Tornow, M. (2009). Silicon based nanogap device for investigating electronic transport through 12 nm long oligomers. In 9th IEEE Conference on Nanotechnology, IEEE NANO 2009 (pp. 83-85). IEEE Computer Society Press.