Si-to-Si wafer bonding using evaporated glass

Roger De Reus, M. Lindahl

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    Abstract

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed maximum bond strengths greater than 50 N/mm2 and an average bond strength of 30 N/mm2 . The bond strength is independent of both the bonding temperature and the feature size. We observed no fracture at the actual bond interface
    Original languageEnglish
    Title of host publicationSolid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
    PublisherIEEE
    Publication date1997
    Pages661-664
    ISBN (Print)0-7803-3829-4
    DOIs
    Publication statusPublished - 1997
    EventInternational Conference on Solid-state Sensors and Actuators (Transducers 1997) - Chicago,IL, United States
    Duration: 16 Jun 199719 Jun 1997

    Conference

    ConferenceInternational Conference on Solid-state Sensors and Actuators (Transducers 1997)
    CountryUnited States
    CityChicago,IL
    Period16/06/199719/06/1997

    Bibliographical note

    Copyright: 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

    Cite this

    Reus, R. D., & Lindahl, M. (1997). Si-to-Si wafer bonding using evaporated glass. In Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on (pp. 661-664). IEEE. https://doi.org/10.1109/SENSOR.1997.613738