Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots

Zhangcheng Xu; Yating Zhang; Atsuchi Tackeuchi; Yoshiji Horikoshi; Jørn Märcher Hvam

doi:10.1063/1.2839312

Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots

Zhangcheng Xu, Yating Zhang, Atsuchi Tackeuchi, Yoshiji Horikoshi, Jørn Märcher Hvam

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Abstract

The exciton radiative lifetime in submonolayer (SML) InGaAs/GaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30 nm in diameter and embedded within the lateral InGaAs QW.

Original language	English
Journal	Applied Physics Letters
Volume	92
Issue number	6
Pages (from-to)	063103
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.2839312
Publication status	Published - 2008

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Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

SEMICONDUCTORS
POWER
CAPTURE
MU-M
LASERS
MODAL GAIN

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title = "Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots",

abstract = "The exciton radiative lifetime in submonolayer (SML) InGaAs/GaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30 nm in diameter and embedded within the lateral InGaAs QW.",

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author = "Zhangcheng Xu and Yating Zhang and Atsuchi Tackeuchi and Yoshiji Horikoshi and Hvam, {J{\o}rn M{\"a}rcher}",

note = "Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

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T1 - Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots

AU - Xu, Zhangcheng

AU - Zhang, Yating

AU - Tackeuchi, Atsuchi

AU - Horikoshi, Yoshiji

AU - Hvam, Jørn Märcher

N1 - Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2008

Y1 - 2008

N2 - The exciton radiative lifetime in submonolayer (SML) InGaAs/GaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30 nm in diameter and embedded within the lateral InGaAs QW.

AB - The exciton radiative lifetime in submonolayer (SML) InGaAs/GaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30 nm in diameter and embedded within the lateral InGaAs QW.

KW - SEMICONDUCTORS

KW - POWER

KW - CAPTURE

KW - MU-M

KW - LASERS

KW - MODAL GAIN

U2 - 10.1063/1.2839312

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M3 - Journal article

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JO - Applied Physics Letters

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ER -

Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots

Abstract

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Keywords

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