Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots

Zhangcheng Xu, Yating Zhang, Atsuchi Tackeuchi, Yoshiji Horikoshi, Jørn Märcher Hvam

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Abstract

The exciton radiative lifetime in submonolayer (SML) InGaAs/GaAs quantum dots (QDs) grown at 500 °C was measured by using time-resolved photoluminescence from 10 to 260 K. The radiative lifetime is around 90 ps and is independent of temperature below 50 K. The observed short radiative lifetime is a key reason for the high performance of SML QD devices and can be explained by the theory of Andreani et al. [Phys. Rev. B 60, 13276 (1999)] calculating the radiative lifetime of QDs formed at the interface fluctuations of a quantum well, as the SML QDs are 20–30 nm in diameter and embedded within the lateral InGaAs QW.
Original languageEnglish
JournalApplied Physics Letters
Volume92
Issue number6
Pages (from-to)063103
ISSN0003-6951
DOIs
Publication statusPublished - 2008

Bibliographical note

Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • SEMICONDUCTORS
  • POWER
  • CAPTURE
  • MU-M
  • LASERS
  • MODAL GAIN

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