Shape- and size-tunable synthesis of tin sulfide thin films for energy applications by electrodeposition

Research output: Contribution to journalJournal article – Annual report year: 2019Researchpeer-review

  • Author: Vikraman, Dhanasekaran

    Dongguk University, Korea, Democratic People's Republic of

  • Author: Thiagarajan, Shrividhya

    Kalasalingam University, India

  • Author: Karuppasamy, K.

    Dongguk University, Korea, Democratic People's Republic of

  • Author: Sanmugam, Anandhavelu

    Vel Tech University, India

  • Author: Choi, Jong-Hyeok

    Dongguk University, Korea, Democratic People's Republic of

  • Author: Prasanna, K.

    Imaging and Structural Analysis, Department of Energy Conversion and Storage, Technical University of Denmark, Frederiksborgvej 399, 4000, Roskilde, Denmark

  • Author: Maiyalagan, Thandavarayan

    SRM Institute of Science and Technolog, India

  • Author: Thaiyan, Mahalingam

    Alagappa University, India

  • Author: Kim, Hyun-Seok

    Dongguk University, Korea, Democratic People's Republic of

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Size and shape tunable tin sulfide (SnS) thin film structures are successfully prepared by a simple cost-effective electrodeposition route. Scanning electron micrographs (SEM) effectively demonstrated the SnS shape modification. An ethylenediaminetetraacetic acid (EDTA) electrolyte was successfully used to alter the size of SnS. The SEM results also give evidence of the surface modification of SnS which was prepared with EDTA. Atomic force micrographs established the topological variations of SnS. Energy dispersive X-ray results confirmed the stoichiometric composition SnS prepared with and without EDTA. X-ray diffraction results revealed the polycrystalline orthorhombic structure of the SnS thin film. The optical band gap derived from the Tauc's plot was found to be in the 1.23–1.26 eV range. The near band edge emission peak for SnS was observed using photoluminescence properties. This simple strategy to synthesize a smooth, dense-packed and crack-free morphology could be an attractive way to produce SnS as a capable material for energy harvesting and optoelectronic devices.
Original languageEnglish
JournalApplied Surface Science
Volume479
Pages (from-to)167-176
ISSN0169-4332
DOIs
Publication statusPublished - 2019
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Surface modi fication, Structure, SnS, XPS, Band gap, SEM, AFM

ID: 168929632