TY - JOUR
T1 - Shape- and size-tunable synthesis of tin sulfide thin films for energy applications by electrodeposition
AU - Vikraman, Dhanasekaran
AU - Thiagarajan, Shrividhya
AU - Karuppasamy, K.
AU - Sanmugam, Anandhavelu
AU - Choi, Jong-Hyeok
AU - Prasanna, K.
AU - Maiyalagan, T.
AU - Thaiyan, Mahalingam
AU - Kim, Hyun-Seok
PY - 2019
Y1 - 2019
N2 - Size and shape tunable tin sulfide (SnS) thin film structures are successfully prepared by a simple cost-effective electrodeposition route. Scanning electron micrographs (SEM) effectively demonstrated the SnS shape modification. An ethylenediaminetetraacetic acid (EDTA) electrolyte was successfully used to alter the size of SnS. The SEM results also give evidence of the surface modification of SnS which was prepared with EDTA. Atomic force micrographs established the topological variations of SnS. Energy dispersive X-ray results confirmed the stoichiometric composition SnS prepared with and without EDTA. X-ray diffraction results revealed the polycrystalline orthorhombic structure of the SnS thin film. The optical band gap derived from the Tauc's plot was found to be in the 1.23–1.26 eV range. The near band edge emission peak for SnS was observed using photoluminescence properties. This simple strategy to synthesize a smooth, dense-packed and crack-free morphology could be an attractive way to produce SnS as a capable material for energy harvesting and optoelectronic devices.
AB - Size and shape tunable tin sulfide (SnS) thin film structures are successfully prepared by a simple cost-effective electrodeposition route. Scanning electron micrographs (SEM) effectively demonstrated the SnS shape modification. An ethylenediaminetetraacetic acid (EDTA) electrolyte was successfully used to alter the size of SnS. The SEM results also give evidence of the surface modification of SnS which was prepared with EDTA. Atomic force micrographs established the topological variations of SnS. Energy dispersive X-ray results confirmed the stoichiometric composition SnS prepared with and without EDTA. X-ray diffraction results revealed the polycrystalline orthorhombic structure of the SnS thin film. The optical band gap derived from the Tauc's plot was found to be in the 1.23–1.26 eV range. The near band edge emission peak for SnS was observed using photoluminescence properties. This simple strategy to synthesize a smooth, dense-packed and crack-free morphology could be an attractive way to produce SnS as a capable material for energy harvesting and optoelectronic devices.
KW - Surface modi fication
KW - Structure
KW - SnS
KW - XPS
KW - Band gap
KW - SEM
KW - AFM
U2 - 10.1016/j.apsusc.2019.02.056
DO - 10.1016/j.apsusc.2019.02.056
M3 - Journal article
SN - 0169-4332
VL - 479
SP - 167
EP - 176
JO - Applied Surface Science
JF - Applied Surface Science
ER -