Series-Tuned High Efficiency RF-Power Amplifiers

Jens Vidkjær

doi:10.1109/MWSYM.2008.4633106

Series-Tuned High Efficiency RF-Power Amplifiers

Jens Vidkjær

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Symposium Digest
Publisher	IEEE
Publication date	2008
ISBN (Print)	978-1-4244-1781-0
DOIs	https://doi.org/10.1109/MWSYM.2008.4633106
Publication status	Published - 2008
Event	2008 IEEE MTT-S International Microwave Symposium Digest - Atlanta, United States Duration: 15 Jun 2008 → 20 Jun 2008

Conference

Conference	2008 IEEE MTT-S International Microwave Symposium Digest
Country/Territory	United States
City	Atlanta
Period	15/06/2008 → 20/06/2008

Bibliographical note

Copyright: 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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10.1109/MWSYM.2008.4633106

Vidkj r TU3D-03Final published version, 504 KB

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title = "Series-Tuned High Efficiency RF-Power Amplifiers",

abstract = "An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.",

author = "Jens Vidkj{\ae}r",

note = "Copyright: 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 2008 IEEE MTT-S International Microwave Symposium Digest ; Conference date: 15-06-2008 Through 20-06-2008",

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N1 - Copyright: 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2008

Y1 - 2008

N2 - An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.

AB - An approach to high efficiency RF-power amplifier design is presented. It addresses simultaneously efficiency optimization and peak voltage limitations when transistors are pushed towards their power limits.

U2 - 10.1109/MWSYM.2008.4633106

DO - 10.1109/MWSYM.2008.4633106

M3 - Article in proceedings

SN - 978-1-4244-1781-0

BT - IEEE MTT-S International Microwave Symposium Digest

PB - IEEE

T2 - 2008 IEEE MTT-S International Microwave Symposium Digest

Y2 - 15 June 2008 through 20 June 2008

ER -

Series-Tuned High Efficiency RF-Power Amplifiers

Abstract

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