TY - ADVS
T1 - Semiconductors: X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO3 Interfaces (Adv. Funct. Mater. 25/2019)
T2 - Frontispiece
A2 - Chikina, Alla
A2 - Caputo, Marco
A2 - Naamneh, Muntaser
A2 - Christensen, Dennis Valbjørn
A2 - Schmitt, Thorsten
A2 - Radovic, Milan
A2 - Strocov, Vladimir N.
N1 - Published in: Advanced Functional Materials, vol.29, Issue 25. Inter-related with article: X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO3 Interfaces (DOI: https://doi.org/10.1002/adfm.201900645)
PY - 2019
Y1 - 2019
N2 - Two‐dimensional electronic states at interfaces are often endowed with novel properties that are promising for future technological applications. Defects at oxide interfaces, in particular, oxygen vacancies play a major role in controlling electronic and magnetic properties at the interfaces. In article number 1900645, Alla Chikina and co‐workers report lithography‐like writing of a metallic state at the interface between SrTiO3 and amorphous Si using X‐ray irradiation.
AB - Two‐dimensional electronic states at interfaces are often endowed with novel properties that are promising for future technological applications. Defects at oxide interfaces, in particular, oxygen vacancies play a major role in controlling electronic and magnetic properties at the interfaces. In article number 1900645, Alla Chikina and co‐workers report lithography‐like writing of a metallic state at the interface between SrTiO3 and amorphous Si using X‐ray irradiation.
U2 - 10.1002/adfm.201970172
DO - 10.1002/adfm.201970172
M3 - Sound/Visual production (digital)
PB - Wiley
ER -