Semiconductors: X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO3 Interfaces (Adv. Funct. Mater. 25/2019): Frontispiece

Alla Chikina* (Author), Marco Caputo (Author), Muntaser Naamneh (Author), Dennis Valbjørn Christensen (Author), Thorsten Schmitt (Author), Milan Radovic (Author), Vladimir N. Strocov (Author)

*Corresponding author for this work

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Abstract

Two‐dimensional electronic states at interfaces are often endowed with novel properties that are promising for future technological applications. Defects at oxide interfaces, in particular, oxygen vacancies play a major role in controlling electronic and magnetic properties at the interfaces. In article number 1900645, Alla Chikina and co‐workers report lithography‐like writing of a metallic state at the interface between SrTiO3 and amorphous Si using X‐ray irradiation.
Original languageEnglish
Publication date2019
Media of outputOnline
DOIs
Publication statusPublished - 2019

Bibliographical note

Published in: Advanced Functional Materials, vol.29, Issue 25. Inter-related with article: X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO3 Interfaces (DOI: https://doi.org/10.1002/adfm.201900645)

Cite this

Chikina, A. (Author), Caputo, M. (Author), Naamneh, M. (Author), Christensen, D. V. (Author), Schmitt, T. (Author), Radovic, M. (Author), & Strocov, V. N. (Author). (2019). Semiconductors: X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO3 Interfaces (Adv. Funct. Mater. 25/2019): Frontispiece. Sound/Visual production (digital), Wiley. https://doi.org/10.1002/adfm.201970172