Abstract
We demonstrate saturable absorber behavior of n-type semiconductors in the THz frequency range using nonlinear THz spectroscopy. Further, we observe THz pulse shortening and increase of the group refractive index at high field strengths.
Original language | English |
---|---|
Publication date | 2010 |
Publication status | Published - 2010 |
Event | 17th International Conference on Ultrafast Phenomena 2010 - Snowmass Village, United States Duration: 18 Jul 2010 → 23 Jul 2010 Conference number: 17 |
Conference
Conference | 17th International Conference on Ultrafast Phenomena 2010 |
---|---|
Number | 17 |
Country/Territory | United States |
City | Snowmass Village |
Period | 18/07/2010 → 23/07/2010 |
Keywords
- Ultrafast processes in condensed matter, including semiconductors
- Spectroscopy
- Ultrafast optics
- Terahertz