Semiconductor Fano Lasers

Jesper Mork*, Yi Yu, Thorsten S. Rasmussen, Elizaveta Semenova, Kresten Yvind

*Corresponding author for this work

    Research output: Contribution to journalJournal articleResearchpeer-review

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    Abstract

    In this paper, a new type of semiconductor laser based on Fano interference is described. One of the laser mirrors relies on the interference between the continuum of waveguide modes and a side-coupled nanocavity, leading to a narrow-band mirror that provides the Fano laser with unique characteristics. In addition to being truly single-mode, the laser can be modulated through the mirror at frequencies far exceeding the relaxation oscillation resonance. Furthermore, nonlinearities in the nanocavity can be used to implement a saturable mirror, leading to passive pulse generation with repetition frequencies in the gigahertz range. This paper reviews the theory of Fano lasers and the current experimental status. Experimentally, the Fano laser concept is demonstrated using a photonic crystal platform with quantum dot active material. Both continuous wave operation and self-pulsing is observed for optically pumped lasers operating at room temperature.

    Original languageEnglish
    Article number8734739
    JournalIEEE Journal of Selected Topics in Quantum Electronics
    Volume25
    Issue number6
    Number of pages14
    ISSN0792-1233
    DOIs
    Publication statusPublished - 1 Nov 2019

    Keywords

    • Nanotechnology
    • Optical pulse generation
    • Photonic bandgap materials
    • Semiconductor lasers

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