Semiconducting III-V nanowires with nanogaps for molecular junctions: DFT transport simulations

Christian Kallesøe, Joachim Alexander Fürst, Kristian Mølhave, Peter Bøggild, Mads Brandbyge

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    We consider here the possibility of using III–V heterostructure nanowires as electrodes for molecular electronics instead of metal point contacts. Using ab initio electronic structure and transport calculations, we study the effect on electronic properties of placing a small molecule with thiol linking groups, benzene-di-thiol (BDT), within a nanosize gap in a III–V nanowire. Furthermore, it is investigated how surface states affect the transport through pristine III–V nanowires and through the BDT molecule situated within the nanogap. Using GaAs and GaP as III–V materials we find that the BDT molecule provides transport through the entire system comparable to the case of gold electrodes.
    Original languageEnglish
    JournalNanotechnology
    Volume20
    Issue number46
    ISSN0957-4484
    DOIs
    Publication statusPublished - 2009

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