Self-phase modulation of a single-cycle THz pulse

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We demonstrate self-phase modulation (SPM) of a single-cycle THz pulse in a semiconductor, using bulk n-GaAs as a model system. The SPM arises from the heating of free electrons in the electric field of the THz pulse. Electron heating leads to an ultrafast reduction of the plasma frequency, which results in a strong modification of the THz-range dielectric function of the material. THz SPM is observed directly in the time domain as a characteristic reshaping of single-cycle THz pulse. In the frequency domain, it corresponds to a strong frequency-dependent refractive index nonlinearity of n-GaAs, which is found to be both positive and negative within the broad spectrum of the THz pulse. The spectral position of zero nonlinearity is defined by the electron momentum relaxation rate. Nonlinear spectral broadening and compression of the single-cycle THz pulse was also observed.
Original languageEnglish
Title of host publicationXVIIIth International Conference on Ultrafast Phenomena : THz Science and Technology, Nano-Optics, Plasmonics and Meta Materials
Number of pages3
PublisherEDP Sciences
Publication date2013
Publication statusPublished - 2013
Event18th International Conference on Ultrafast Phenomena (UP 2012) - Lausanne, Switzerland
Duration: 8 Jul 201213 Jul 2012


Conference18th International Conference on Ultrafast Phenomena (UP 2012)
Internet address
SeriesE P J Web of Conferences

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This is an Open Access article distributed under the terms of the Creative Commons Attribution License 2.0 , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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