Self-consistent modelling of resonant tunnelling structures

T. Fiig, A.P. Jauho

    Research output: Contribution to journalJournal articleResearch


    We report a comprehensive study of the effects of self-consistency on the I-V-characteristics of resonant tunnelling structures. The calculational method is based on a simultaneous solution of the effective-mass Schrödinger equation and the Poisson equation, and the current is evaluated with the Tsu-Esaki formula. We consider the formation of the accumulation layer in the emitter contact layer in a number of different approximation schemes, and we introduce a novel way to account for the energy relaxation of continuum states to the two-dimensional quasi-bound states appearing for contain applied voltages and carrier densities at the emitter-barrier interface. We include the two-dimensional accumulation layer charge and the quantum well charge in our self-consistent scheme. We discuss the evaluation of the current contribution originating from the two-dimensional accumulation layer charges, and our qualitative estimates seem consistent with recent experimental studies. The intrinsic bistability of resonant tunnelling diodes is analyzed within several different approximation schemes.
    Original languageEnglish
    JournalSurface Science
    Issue number1-3
    Pages (from-to)392-395
    Publication statusPublished - 1992


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