Selective area oxidation of copper derived from chemical vapor deposited graphene microstructure

Birong Luo*, Shuai Yang, Aiheng Yuan, Bo Zhang, Dejun Li, Peter Bøggild, Timothy J Booth*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The barrier properties of graphene coating are highly correlated with its microstructure which is then determined by the chemical vapor deposition (CVD) growth history on metals. We demonstrate here an unrevealed selective area oxidation of copper under graphene, which is derived from the implicit-etching-controlled CVD growth mode of graphene. By charactering and analyzing the selective area patterns of Cu oxidation, an etched pattern trace with nano/microvoids during graphene growth has been proposed to account for this. Based on such selective oxidation of Cu, distributed galvanic corrosion will be triggered and proceed locally at the interface of graphene-Cu system to coalescence together under a continuous corrosion environment, eventually presenting a homogeneous oxidation of Cu and gradual decoupling of graphene-Cu system. This discovery will assist our understanding of the barrier properties of two-dimensional materials and can be extended to other applications related to quality monitoring of grown materials and defects-based chemical modifications.
Original languageEnglish
Article number485603
JournalNanotechnology
Volume31
Issue number48
Number of pages8
ISSN0957-4484
DOIs
Publication statusPublished - 2020

Keywords

  • Selective area oxidation
  • Chemical vapor deposition
  • Growth pattern
  • Corrosion
  • Graphene coating

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