Second-harmonic imaging of semiconductor quantum dots

John Erland Østergaard, Sergey I. Bozhevolnyi, Kjeld Pedersen, Jacob Riis Jensen, Jørn Märcher Hvam

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Abstract

Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum. In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics.
Original languageEnglish
JournalApplied Physics Letters
Volume77
Issue number6
Pages (from-to)806-808
ISSN0003-6951
DOIs
Publication statusPublished - 2000

Bibliographical note

Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • 2ND-HARMONIC GENERATION
  • DOMAINS
  • MICROSCOPY

Cite this

Østergaard, J. E., Bozhevolnyi, S. I., Pedersen, K., Jensen, J. R., & Hvam, J. M. (2000). Second-harmonic imaging of semiconductor quantum dots. Applied Physics Letters, 77(6), 806-808. https://doi.org/10.1063/1.1306634