Second-harmonic imaging of semiconductor quantum dots

John Erland Østergaard, Sergey I. Bozhevolnyi, Kjeld Pedersen, Jacob Riis Jensen, Jørn Märcher Hvam

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    Abstract

    Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum. In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations. Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume77
    Issue number6
    Pages (from-to)806-808
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2000

    Bibliographical note

    Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • 2ND-HARMONIC GENERATION
    • DOMAINS
    • MICROSCOPY

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