Schottky barrier enhancement on n-InP solar cell applications

Thomas Clausen; Otto Leistiko

doi:10.1109/WCPEC.1994.520654

Schottky barrier enhancement on n-InP solar cell applications

Thomas Clausen, Otto Leistiko

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

436 Downloads (Pure)

Abstract

It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved

Original language	English
Title of host publication	Conference Record of the 24th Photovoltaic Energy Conversion
Volume	Volume 2
Publisher	IEEE
Publication date	1994
Pages	1807-1810
ISBN (Print)	07-80-31460-3
DOIs	https://doi.org/10.1109/WCPEC.1994.520654
Publication status	Published - 1994
Event	1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - Waikoloa, HI, United States Duration: 5 Dec 1994 → 9 Dec 1994 Conference number: 1 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3971

Conference

Conference	1994 IEEE 1st World Conference on Photovoltaic Energy Conversion
Number	1
Country/Territory	United States
City	Waikoloa, HI
Period	05/12/1994 → 09/12/1994
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3971

Bibliographical note

Copyright: 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Access to Document

10.1109/WCPEC.1994.520654

ClausenFinal published version, 373 KB

OpenUrl availability

Full text

Cite this

@inproceedings{85e2fa34255e49f0bb19cef00735cc8a,

title = "Schottky barrier enhancement on n-InP solar cell applications",

abstract = "It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved",

author = "Thomas Clausen and Otto Leistiko",

note = "Copyright: 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion ; Conference date: 05-12-1994 Through 09-12-1994",

year = "1994",

doi = "10.1109/WCPEC.1994.520654",

language = "English",

isbn = "07-80-31460-3",

volume = "Volume 2",

pages = "1807--1810",

booktitle = "Conference Record of the 24th Photovoltaic Energy Conversion",

publisher = "IEEE",

address = "United States",

url = "http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3971",

}

TY - GEN

T1 - Schottky barrier enhancement on n-InP solar cell applications

AU - Clausen, Thomas

AU - Leistiko, Otto

N1 - Conference code: 1

PY - 1994

Y1 - 1994

N2 - It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved

AB - It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved

U2 - 10.1109/WCPEC.1994.520654

DO - 10.1109/WCPEC.1994.520654

M3 - Article in proceedings

SN - 07-80-31460-3

VL - Volume 2

SP - 1807

EP - 1810

BT - Conference Record of the 24th Photovoltaic Energy Conversion

PB - IEEE

T2 - 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion

Y2 - 5 December 1994 through 9 December 1994

ER -

Schottky barrier enhancement on n-InP solar cell applications

Abstract

Conference

Bibliographical note

Access to Document

OpenUrl availability

Fingerprint

Cite this