Abstract
It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved
Original language | English |
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Title of host publication | Conference Record of the 24th Photovoltaic Energy Conversion |
Volume | Volume 2 |
Publisher | IEEE |
Publication date | 1994 |
Pages | 1807-1810 |
ISBN (Print) | 07-80-31460-3 |
DOIs | |
Publication status | Published - 1994 |
Event | 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - Waikoloa, HI, United States Duration: 5 Dec 1994 → 9 Dec 1994 Conference number: 1 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3971 |
Conference
Conference | 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion |
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Number | 1 |
Country/Territory | United States |
City | Waikoloa, HI |
Period | 05/12/1994 → 09/12/1994 |
Internet address |