Schottky barrier enhancement on n-InP solar cell applications

Thomas Clausen, Otto Leistiko

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    It is demonstrated that the Schottky barrier height on n-type InP can be enhanced to values close to the energy bandgap (1.35 eV) by employing a AuZnCr metallization. The process is simple and requires only mild and fast annealing sequences with temperatures not exceeding 500°C. Also, no critical epitaxial growth step of junctions is needed, making the process fairly cheap. Thus, prospects for an efficient and simple solar cell device structure for space application purposes based on highly radiant-resistant InP are greatly improved
    Original languageEnglish
    Title of host publicationConference Record of the 24th Photovoltaic Energy Conversion
    VolumeVolume 2
    Publication date1994
    ISBN (Print)07-80-31460-3
    Publication statusPublished - 1994
    Event1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - Waikoloa, HI, United States
    Duration: 5 Dec 19949 Dec 1994
    Conference number: 1


    Conference1994 IEEE 1st World Conference on Photovoltaic Energy Conversion
    Country/TerritoryUnited States
    CityWaikoloa, HI
    Internet address

    Bibliographical note

    Copyright: 1994 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE


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