Scanning microscopic four-point conductivity probes

Christian Leth Petersen, Torben Mikael Hansen, Peter Bøggild, Anja Boisen, Ole Hansen, T. Hassenkam, Francois Grey

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    A method for fabricating microscopic four-point probes is presented. The method uses silicon-based microfabrication technology involving only two patterning steps. The last step in the fabrication process is an unmasked deposition of the conducting probe material, and it is thus possible to select the conducting material either for a silicon wafer or a single probe unit. Using shadow masking photolithography an electrode spacing (pitch) down to 1.1 mum was obtained, with cantilever separation down to 200 run. Characterisation measurements have shown the microscopic probes to be mechanically very flexible and robust. Repeated conductivity measurements on polythiophene films in the same surface area are reproduced within an accuracy of 3%. Automated nanoresolution position control allows scanning across millimetre sized areas, in order to create high spatial resolution maps of the in-plane conductivity.
    Original languageEnglish
    JournalSensors and Actuators A-physical
    Volume96
    Issue number1
    Pages (from-to)53-58
    ISSN0924-4247
    Publication statusPublished - 2002

    Cite this

    Petersen, C. L., Hansen, T. M., Bøggild, P., Boisen, A., Hansen, O., Hassenkam, T., & Grey, F. (2002). Scanning microscopic four-point conductivity probes. Sensors and Actuators A-physical, 96(1), 53-58.
    Petersen, Christian Leth ; Hansen, Torben Mikael ; Bøggild, Peter ; Boisen, Anja ; Hansen, Ole ; Hassenkam, T. ; Grey, Francois. / Scanning microscopic four-point conductivity probes. In: Sensors and Actuators A-physical. 2002 ; Vol. 96, No. 1. pp. 53-58.
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    title = "Scanning microscopic four-point conductivity probes",
    abstract = "A method for fabricating microscopic four-point probes is presented. The method uses silicon-based microfabrication technology involving only two patterning steps. The last step in the fabrication process is an unmasked deposition of the conducting probe material, and it is thus possible to select the conducting material either for a silicon wafer or a single probe unit. Using shadow masking photolithography an electrode spacing (pitch) down to 1.1 mum was obtained, with cantilever separation down to 200 run. Characterisation measurements have shown the microscopic probes to be mechanically very flexible and robust. Repeated conductivity measurements on polythiophene films in the same surface area are reproduced within an accuracy of 3{\%}. Automated nanoresolution position control allows scanning across millimetre sized areas, in order to create high spatial resolution maps of the in-plane conductivity.",
    author = "Petersen, {Christian Leth} and Hansen, {Torben Mikael} and Peter B{\o}ggild and Anja Boisen and Ole Hansen and T. Hassenkam and Francois Grey",
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    Petersen, CL, Hansen, TM, Bøggild, P, Boisen, A, Hansen, O, Hassenkam, T & Grey, F 2002, 'Scanning microscopic four-point conductivity probes', Sensors and Actuators A-physical, vol. 96, no. 1, pp. 53-58.

    Scanning microscopic four-point conductivity probes. / Petersen, Christian Leth; Hansen, Torben Mikael; Bøggild, Peter; Boisen, Anja; Hansen, Ole; Hassenkam, T.; Grey, Francois.

    In: Sensors and Actuators A-physical, Vol. 96, No. 1, 2002, p. 53-58.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Scanning microscopic four-point conductivity probes

    AU - Petersen, Christian Leth

    AU - Hansen, Torben Mikael

    AU - Bøggild, Peter

    AU - Boisen, Anja

    AU - Hansen, Ole

    AU - Hassenkam, T.

    AU - Grey, Francois

    PY - 2002

    Y1 - 2002

    N2 - A method for fabricating microscopic four-point probes is presented. The method uses silicon-based microfabrication technology involving only two patterning steps. The last step in the fabrication process is an unmasked deposition of the conducting probe material, and it is thus possible to select the conducting material either for a silicon wafer or a single probe unit. Using shadow masking photolithography an electrode spacing (pitch) down to 1.1 mum was obtained, with cantilever separation down to 200 run. Characterisation measurements have shown the microscopic probes to be mechanically very flexible and robust. Repeated conductivity measurements on polythiophene films in the same surface area are reproduced within an accuracy of 3%. Automated nanoresolution position control allows scanning across millimetre sized areas, in order to create high spatial resolution maps of the in-plane conductivity.

    AB - A method for fabricating microscopic four-point probes is presented. The method uses silicon-based microfabrication technology involving only two patterning steps. The last step in the fabrication process is an unmasked deposition of the conducting probe material, and it is thus possible to select the conducting material either for a silicon wafer or a single probe unit. Using shadow masking photolithography an electrode spacing (pitch) down to 1.1 mum was obtained, with cantilever separation down to 200 run. Characterisation measurements have shown the microscopic probes to be mechanically very flexible and robust. Repeated conductivity measurements on polythiophene films in the same surface area are reproduced within an accuracy of 3%. Automated nanoresolution position control allows scanning across millimetre sized areas, in order to create high spatial resolution maps of the in-plane conductivity.

    M3 - Journal article

    VL - 96

    SP - 53

    EP - 58

    JO - Sensors and Actuators A: Physical

    JF - Sensors and Actuators A: Physical

    SN - 0924-4247

    IS - 1

    ER -