Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material

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Abstract

Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced the thermal conductivity by up to 7-fold at room temperature. By carefully selecting the Sc-dopant concentrations, a high power factor of 7.1 × 10−4 W m−1 K−2 at 1173 K could be obtained. Therefore, the highest ZT ∼ 0.3 at 1173 K was achieved for the Zn0.9Cd0.1Sc0.01O1.015 sample, and it has so far one of the highest ZT values among those reported for ZnO based thermoelectric materials over the temperature range, e.g., its ZT value at 300 K, which is 0.012, is over 1 order of magnitude higher than that of the state-of-the-art nanostructured Al-doped ZnO, which is 0.0013. It suggests that this material is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT.
Original languageEnglish
JournalJournal of Materials Chemistry A
Volume4
Issue number31
Pages (from-to)12221-12231
ISSN2050-7488
DOIs
Publication statusPublished - 2016

Bibliographical note

This article is published Open Access as part of the RSC's Gold for Gold initiative, licensed under a Creative Commons Attribution 3.0 Unported Licence.

Cite this

@article{9997938e0fe643d485db086952a2e028,
title = "Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material",
abstract = "Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced the thermal conductivity by up to 7-fold at room temperature. By carefully selecting the Sc-dopant concentrations, a high power factor of 7.1 × 10−4 W m−1 K−2 at 1173 K could be obtained. Therefore, the highest ZT ∼ 0.3 at 1173 K was achieved for the Zn0.9Cd0.1Sc0.01O1.015 sample, and it has so far one of the highest ZT values among those reported for ZnO based thermoelectric materials over the temperature range, e.g., its ZT value at 300 K, which is 0.012, is over 1 order of magnitude higher than that of the state-of-the-art nanostructured Al-doped ZnO, which is 0.0013. It suggests that this material is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT.",
author = "Li Han and Christensen, {Dennis Valbj{\o}rn} and Arghya Bhowmik and Simonsen, {S{\o}ren Bredmose} and Le, {Thanh Hung} and Ebtisam Abdellahi and Chen, {Y. Z.} and {Van Nong}, Ngo and S{\o}ren Linderoth and Nini Pryds",
note = "This article is published Open Access as part of the RSC's Gold for Gold initiative, licensed under a Creative Commons Attribution 3.0 Unported Licence.",
year = "2016",
doi = "10.1039/C6TA03126A",
language = "English",
volume = "4",
pages = "12221--12231",
journal = "Journal of Materials Chemistry A",
issn = "2050-7488",
publisher = "RSC Publications",
number = "31",

}

Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material. / Han, Li; Christensen, Dennis Valbjørn; Bhowmik, Arghya; Simonsen, Søren Bredmose; Le, Thanh Hung; Abdellahi, Ebtisam; Chen, Y. Z.; Van Nong, Ngo; Linderoth, Søren; Pryds, Nini.

In: Journal of Materials Chemistry A, Vol. 4, No. 31, 2016, p. 12221-12231.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Scandium-doped zinc cadmium oxide as a new stable n-type oxide thermoelectric material

AU - Han, Li

AU - Christensen, Dennis Valbjørn

AU - Bhowmik, Arghya

AU - Simonsen, Søren Bredmose

AU - Le, Thanh Hung

AU - Abdellahi, Ebtisam

AU - Chen, Y. Z.

AU - Van Nong, Ngo

AU - Linderoth, Søren

AU - Pryds, Nini

N1 - This article is published Open Access as part of the RSC's Gold for Gold initiative, licensed under a Creative Commons Attribution 3.0 Unported Licence.

PY - 2016

Y1 - 2016

N2 - Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced the thermal conductivity by up to 7-fold at room temperature. By carefully selecting the Sc-dopant concentrations, a high power factor of 7.1 × 10−4 W m−1 K−2 at 1173 K could be obtained. Therefore, the highest ZT ∼ 0.3 at 1173 K was achieved for the Zn0.9Cd0.1Sc0.01O1.015 sample, and it has so far one of the highest ZT values among those reported for ZnO based thermoelectric materials over the temperature range, e.g., its ZT value at 300 K, which is 0.012, is over 1 order of magnitude higher than that of the state-of-the-art nanostructured Al-doped ZnO, which is 0.0013. It suggests that this material is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT.

AB - Scandium-doped zinc cadmium oxide (Sc-doped ZnCdO) is proposed as a new n-type oxide thermoelectric material. The material is sintered in air to maintain the oxygen stoichiometry and avoid instability issues. The successful alloying of CdO with ZnO at a molar ratio of 1 : 9 significantly reduced the thermal conductivity by up to 7-fold at room temperature. By carefully selecting the Sc-dopant concentrations, a high power factor of 7.1 × 10−4 W m−1 K−2 at 1173 K could be obtained. Therefore, the highest ZT ∼ 0.3 at 1173 K was achieved for the Zn0.9Cd0.1Sc0.01O1.015 sample, and it has so far one of the highest ZT values among those reported for ZnO based thermoelectric materials over the temperature range, e.g., its ZT value at 300 K, which is 0.012, is over 1 order of magnitude higher than that of the state-of-the-art nanostructured Al-doped ZnO, which is 0.0013. It suggests that this material is a good candidate for improving the overall conversion efficiencies in oxide thermoelectric modules. Meanwhile, Sc-doped ZnCdO is robust in air at high temperatures, whereas other n-type materials, such as Al-doped ZnO, will experience rapid degradation of their electrical conductivity and ZT.

U2 - 10.1039/C6TA03126A

DO - 10.1039/C6TA03126A

M3 - Journal article

VL - 4

SP - 12221

EP - 12231

JO - Journal of Materials Chemistry A

JF - Journal of Materials Chemistry A

SN - 2050-7488

IS - 31

ER -