Scaling theory put into practice: First-principles modeling of transport in doped silicon nanowires

Troels Markussen, R. Rurali, Antti-Pekka Jauho, Mads Brandbyge

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    Abstract

    We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the crossover from ballistic to diffusive transport in boron or phosphorus doped Si nanowires by computing the mean free path, sample-averaged conductance hGi, and sample-to-sample variations stdG as a function of energy, doping density, wire length, and the radial dopant profile. Our main findings are (i) the main trends can be predicted quantitatively based on the scattering properties of single dopants, (ii) the sample-to-sample fluctuations depend on energy but not on doping density, thereby displaying a degree of universality, and (iii) in the diffusive regime the analytical predictions of the Dorokhov-Mello-Pereyra- Kumar theory are in good agreement with our ab initio calculations.
    Original languageEnglish
    JournalPhysical Review Letters
    Volume99
    Issue number7
    Pages (from-to)076803
    ISSN0031-9007
    DOIs
    Publication statusPublished - 2007

    Bibliographical note

    Copyright 2007 American Physical Society

    Keywords

    • CONDUCTANCE FLUCTUATIONS

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