Saturation of charge noise in Single Electron Tunneling transistor

A.N. Tavkhelidze; Jesper Mygind; L.S. Kuzmin; O. Gorbonosov

doi:10.1007/BF02571135

Saturation of charge noise in Single Electron Tunneling transistor

A.N. Tavkhelidze, Jesper Mygind, L.S. Kuzmin, O. Gorbonosov

Department of Physics

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Noise characteristics of Single Electron Tunneling (SET) transistors have been investigated at very low frequencies using resistive coaxial lines to prevent especially the high frequency part of the 4.2 K thermal radiation from reaching the sample. At 10 Hz we find a l/f-type noise spectrum with a charge sensitivity Q_N = 5*10^-4 e/Hz^1/2 as previously reported without special hf shielding. Below ≈0.1 Hz the noise density saturates, and at 0.25 mHz we measure QN =1 * 10^-2 e/Hz^1/2. Also the voltage dependence of the noise power in the sensitive regions of the I-V curve is investigated for gate voltages corresponding to maximum and minimum charge sensitivity.

Original language	English
Journal	Czechoslovak Journal of Physics
Volume	46
Issue number	SUPPL. 4
Pages (from-to)	2287-2288
ISSN	0011-4626
DOIs	https://doi.org/10.1007/BF02571135
Publication status	Published - 1996
Event	21st International Conference on Low Temperature Physics - Prague, Czech Republic Duration: 8 Aug 1996 → 14 Aug 1996 Conference number: 21

Conference

Conference	21st International Conference on Low Temperature Physics
Number	21
Country/Territory	Czech Republic
City	Prague
Period	08/08/1996 → 14/08/1996

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title = "Saturation of charge noise in Single Electron Tunneling transistor",

abstract = "Noise characteristics of Single Electron Tunneling (SET) transistors have been investigated at very low frequencies using resistive coaxial lines to prevent especially the high frequency part of the 4.2 K thermal radiation from reaching the sample. At 10 Hz we find a l/f-type noise spectrum with a charge sensitivity QN = 5*10-4 e/Hz1/2 as previously reported without special hf shielding. Below ≈0.1 Hz the noise density saturates, and at 0.25 mHz we measure QN =1 * 10-2 e/Hz1/2. Also the voltage dependence of the noise power in the sensitive regions of the I-V curve is investigated for gate voltages corresponding to maximum and minimum charge sensitivity.",

author = "A.N. Tavkhelidze and Jesper Mygind and L.S. Kuzmin and O. Gorbonosov",

year = "1996",

doi = "10.1007/BF02571135",

language = "English",

volume = "46",

pages = "2287--2288",

journal = "Czechoslovak Journal of Physics",

issn = "0011-4626",

publisher = "Springer New York",

number = "SUPPL. 4",

note = "21st International Conference on Low Temperature Physics, LT21 ; Conference date: 08-08-1996 Through 14-08-1996",

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TY - JOUR

T1 - Saturation of charge noise in Single Electron Tunneling transistor

AU - Tavkhelidze, A.N.

AU - Mygind, Jesper

AU - Kuzmin, L.S.

AU - Gorbonosov, O.

N1 - Conference code: 21

PY - 1996

Y1 - 1996

N2 - Noise characteristics of Single Electron Tunneling (SET) transistors have been investigated at very low frequencies using resistive coaxial lines to prevent especially the high frequency part of the 4.2 K thermal radiation from reaching the sample. At 10 Hz we find a l/f-type noise spectrum with a charge sensitivity QN = 5*10-4 e/Hz1/2 as previously reported without special hf shielding. Below ≈0.1 Hz the noise density saturates, and at 0.25 mHz we measure QN =1 * 10-2 e/Hz1/2. Also the voltage dependence of the noise power in the sensitive regions of the I-V curve is investigated for gate voltages corresponding to maximum and minimum charge sensitivity.

AB - Noise characteristics of Single Electron Tunneling (SET) transistors have been investigated at very low frequencies using resistive coaxial lines to prevent especially the high frequency part of the 4.2 K thermal radiation from reaching the sample. At 10 Hz we find a l/f-type noise spectrum with a charge sensitivity QN = 5*10-4 e/Hz1/2 as previously reported without special hf shielding. Below ≈0.1 Hz the noise density saturates, and at 0.25 mHz we measure QN =1 * 10-2 e/Hz1/2. Also the voltage dependence of the noise power in the sensitive regions of the I-V curve is investigated for gate voltages corresponding to maximum and minimum charge sensitivity.

U2 - 10.1007/BF02571135

DO - 10.1007/BF02571135

M3 - Journal article

SN - 0011-4626

VL - 46

SP - 2287

EP - 2288

JO - Czechoslovak Journal of Physics

JF - Czechoslovak Journal of Physics

IS - SUPPL. 4

T2 - 21st International Conference on Low Temperature Physics

Y2 - 8 August 1996 through 14 August 1996

ER -

Saturation of charge noise in Single Electron Tunneling transistor

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