Saturation and noise properties of quantum-dot optical amplifiers

Tommy Winther Berg; Jesper Mørk

doi:10.1109/JQE.2004.835114

Saturation and noise properties of quantum-dot optical amplifiers

Tommy Winther Berg
, Jesper Mørk

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Based on extensive numerical calculations, quantum-dot (QD) amplifiers are predicted to offer higher output power and lower noise figure compared to bulk as well as quantum well amplifiers. The underlying physical mechanisms are analyzed in detail, leading to the identification of a few key requirements that QD amplifiers should meet in order to achieve such superior linear characteristics. The existence of a highly inverted wetting layer or barrier region, acting as a carrier reservoir, is central to this performance enhancement. It is shown that amplified spontaneous emission acts to decrease the inversion of the wetting layer states, thus helping to quench the gain of these states, which might otherwise dominate.

Original language	English
Journal	I E E E Journal of Quantum Electronics
Volume	40
Issue number	11
Pages (from-to)	1527-1539
ISSN	0018-9197
DOIs	https://doi.org/10.1109/JQE.2004.835114
Publication status	Published - 2004

Bibliographical note

Copyright (2004) IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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title = "Saturation and noise properties of quantum-dot optical amplifiers",

abstract = "Based on extensive numerical calculations, quantum-dot (QD) amplifiers are predicted to offer higher output power and lower noise figure compared to bulk as well as quantum well amplifiers. The underlying physical mechanisms are analyzed in detail, leading to the identification of a few key requirements that QD amplifiers should meet in order to achieve such superior linear characteristics. The existence of a highly inverted wetting layer or barrier region, acting as a carrier reservoir, is central to this performance enhancement. It is shown that amplified spontaneous emission acts to decrease the inversion of the wetting layer states, thus helping to quench the gain of these states, which might otherwise dominate.",

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note = "Copyright (2004) IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.",

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AU - Mørk, Jesper

N1 - Copyright (2004) IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 2004

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N2 - Based on extensive numerical calculations, quantum-dot (QD) amplifiers are predicted to offer higher output power and lower noise figure compared to bulk as well as quantum well amplifiers. The underlying physical mechanisms are analyzed in detail, leading to the identification of a few key requirements that QD amplifiers should meet in order to achieve such superior linear characteristics. The existence of a highly inverted wetting layer or barrier region, acting as a carrier reservoir, is central to this performance enhancement. It is shown that amplified spontaneous emission acts to decrease the inversion of the wetting layer states, thus helping to quench the gain of these states, which might otherwise dominate.

AB - Based on extensive numerical calculations, quantum-dot (QD) amplifiers are predicted to offer higher output power and lower noise figure compared to bulk as well as quantum well amplifiers. The underlying physical mechanisms are analyzed in detail, leading to the identification of a few key requirements that QD amplifiers should meet in order to achieve such superior linear characteristics. The existence of a highly inverted wetting layer or barrier region, acting as a carrier reservoir, is central to this performance enhancement. It is shown that amplified spontaneous emission acts to decrease the inversion of the wetting layer states, thus helping to quench the gain of these states, which might otherwise dominate.

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DO - 10.1109/JQE.2004.835114

M3 - Journal article

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JO - I E E E Journal of Quantum Electronics

JF - I E E E Journal of Quantum Electronics

IS - 11

ER -

Saturation and noise properties of quantum-dot optical amplifiers

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