Abstract
Quantum emitters in solid-state materials are highly promising building blocks for quantum information processing and communication science. Recently, single-photon emission from van der Waals materials has been reported in transition metal dichalcogenides and hexagonal boron nitride, exhibiting the potential to realize photonic quantum technologies in two-dimensional materials. Here, we report the generation of room temperature single-photon emission from exfoliated and thermally annealed single crystals of van der Waals α-MoO3. The second-order correlation function measurement displays clear photon antibunching, while the luminescence intensity exceeds 0.4 Mcts/s and remains stable under laser excitation. The theoretical calculation suggests that an oxygen vacancy defect is a possible candidate for the observed emitters. Together with photostability and brightness, quantum emitters in α-MoO3 provide a new avenue to realize photon-based quantum information science in van der Waals materials.
| Original language | English |
|---|---|
| Journal | Nano Letters |
| Volume | 25 |
| Issue number | 3 |
| Pages (from-to) | 1142-1149 |
| ISSN | 1530-6984 |
| DOIs | |
| Publication status | Published - 2025 |
Keywords
- Defect center
- Single-photon emitter
- Transition metal oxide
- Van der Waals material
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