Room Temperature Quantum Emitters in van der Waals α-MoO3

Jeonghan Lee, Haiyuan Wang, Keun Yeol Park, Soonsang Huh, Donghan Kim, Mihyang Yu, Changyoung Kim, Kristian Sommer Thygesen*, Jieun Lee*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

Quantum emitters in solid-state materials are highly promising building blocks for quantum information processing and communication science. Recently, single-photon emission from van der Waals materials has been reported in transition metal dichalcogenides and hexagonal boron nitride, exhibiting the potential to realize photonic quantum technologies in two-dimensional materials. Here, we report the generation of room temperature single-photon emission from exfoliated and thermally annealed single crystals of van der Waals α-MoO3. The second-order correlation function measurement displays clear photon antibunching, while the luminescence intensity exceeds 0.4 Mcts/s and remains stable under laser excitation. The theoretical calculation suggests that an oxygen vacancy defect is a possible candidate for the observed emitters. Together with photostability and brightness, quantum emitters in α-MoO3 provide a new avenue to realize photon-based quantum information science in van der Waals materials.

Original languageEnglish
JournalNano Letters
Volume25
Issue number3
Pages (from-to)1142-1149
ISSN1530-6984
DOIs
Publication statusPublished - 2025

Keywords

  • Defect center
  • Single-photon emitter
  • Transition metal oxide
  • Van der Waals material

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