Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Yunzhong Chen; N. Bovet; Takeshi Kasama; W.W. Gao; Sadegh Yazdi; C. Ma; Nini Pryds; Søren Linderoth

doi:10.1002/adma.201304634

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

Yunzhong Chen, N. Bovet, Takeshi Kasama, W.W. Gao, Sadegh Yazdi, C. Ma, Nini Pryds, Søren Linderoth

Department of Energy Conversion and Storage

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Abstract

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this novel oxide interface.

Original language	English
Journal	Advanced Materials
Volume	26
Issue number	9
Pages (from-to)	1462–1467
ISSN	0935-9648
DOIs	https://doi.org/10.1002/adma.201304634
Publication status	Published - 2014

Keywords

Complex oxide
Oxide interfaces
Two-dimensional electron gases
Alumina
Strontium titanate

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title = "Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces",

abstract = "Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this novel oxide interface. ",

keywords = "Complex oxide, Oxide interfaces, Two-dimensional electron gases, Alumina, Strontium titanate",

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T1 - Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

AU - Chen, Yunzhong

AU - Bovet, N.

AU - Kasama, Takeshi

AU - Gao, W.W.

AU - Yazdi, Sadegh

AU - Ma, C.

AU - Pryds, Nini

AU - Linderoth, Søren

PY - 2014

Y1 - 2014

N2 - Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this novel oxide interface.

AB - Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this novel oxide interface.

KW - Complex oxide

KW - Oxide interfaces

KW - Two-dimensional electron gases

KW - Alumina

KW - Strontium titanate

U2 - 10.1002/adma.201304634

DO - 10.1002/adma.201304634

M3 - Journal article

C2 - 24338762

SN - 0935-9648

VL - 26

SP - 1462

EP - 1467

JO - Advanced Materials

JF - Advanced Materials

IS - 9

ER -

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

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Keywords

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