Summary form only given. Semiconductor quantum dots (QDs) are receiving increasing attention for fundamental studies on zero-dimensional confinement and for device applications. Quantum-dot lasers are expected to show superior performances, like high material gain, low and temperature-independent threshold current and chirp-free operation, due to the delta-like density of states (DOS). We have measured the dephasing time at room temperature of InAs QDs embedded in a waveguide to estimate the lower limit for the energy-broadening of the DOS given by the homogeneous linewidth. The sample consists of 3 stacked layers of InAs-InGaAs-GaAs quantum dots.
|Title of host publication||Proceedings of QELS'99|
|Number of pages||46|
|Place of Publication||Baltimore|
|Publication status||Published - 1999|
|Event||1999 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States|
Duration: 23 May 1999 → 26 May 1999
|Conference||1999 Quantum Electronics and Laser Science Conference|
|Period||23/05/1999 → 26/05/1999|
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Borri, P., Langbein, W., Hvam, J. M., Mao, M. -H., Heinrichsdorff, F., & Bimberg, D. (1999). Room-temperature dephasing in InAs/GaAs quantum dots. In Proceedings of QELS'99 (pp. QTuC2). IEEE. https://doi.org/10.1109/QELS.1999.807152