Room-temperature dephasing in InAs/GaAs quantum dots

Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam, M. -H. Mao, F. Heinrichsdorff, Dieter Bimberg

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Summary form only given. Semiconductor quantum dots (QDs) are receiving increasing attention for fundamental studies on zero-dimensional confinement and for device applications. Quantum-dot lasers are expected to show superior performances, like high material gain, low and temperature-independent threshold current and chirp-free operation, due to the delta-like density of states (DOS). We have measured the dephasing time at room temperature of InAs QDs embedded in a waveguide to estimate the lower limit for the energy-broadening of the DOS given by the homogeneous linewidth. The sample consists of 3 stacked layers of InAs-InGaAs-GaAs quantum dots.
Original languageEnglish
Title of host publicationProceedings of QELS'99
Number of pages46
Place of PublicationBaltimore
Publication date1999
ISBN (Print)1-55752-576-X
Publication statusPublished - 1999
Event1999 Quantum Electronics and Laser Science Conference - Baltimore, MD, United States
Duration: 23 May 199926 May 1999


Conference1999 Quantum Electronics and Laser Science Conference
CountryUnited States
CityBaltimore, MD
Internet address

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