Room-Temperature Dephasing in InAs Quantum Dots

Paola Borri, Wolfgang Langbein, Jesper Mørk, Jørn Märcher Hvam, F. Heinrichsdorff, M.-H. Mao, Dieter Bimberg

    Research output: Contribution to journalJournal articleResearchpeer-review


    The room temperature dephasing in InAs/InGaAs/GaAs self-assembled quantum dots, embedded in a waveguide for laser applications, is measured using two independent methods: spectral hole burning and four-wave mixing. Without the application of bias current for electrical carrier injection, a dephasing time of ~260 fs, weakly dependent on the optical excitation density, is found and attributed to phonon interaction. The application of bias current, leading to population inversion in the dot ground state and optical gain, strongly decreases the dephasing time to less than 50 fs, likely due to enhanced carrier-carrier scattering in the presence of the electrically injected carriers.
    Original languageEnglish
    JournalPhysica Status Solidi A
    Issue number1
    Pages (from-to)337-340
    Publication statusPublished - 2000
    Event6th International Meeting on Optics of Excitons in Confined Systems - Ascona, Switzerland
    Duration: 30 Aug 19992 Sept 1999
    Conference number: 6


    Conference6th International Meeting on Optics of Excitons in Confined Systems

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