Room temperature current oscillations in naturally grown silicon nanocrystallites embedded in oxide films

Z. Yu, M. Aceves-Mijares, K. Monfil, Wolff-Ragnar Kiebach, R. López-Estopier, J. Carrillo, Z. Yu

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Current oscillations and other abnormalities in the dark current-voltage characteristics of an aluminum/silicon-rich oxide (SRO)/silicon structure were observed at room temperature. The SRO layers in the devices were fabricated by low pressure chemical vapor deposition and postdeposition thermal annealing. The spikelike current oscillations and other abnormalities are interpreted by an alternative switching between the on and off states of the conduction paths through the Si nanocrystallites at proper biases. © 2008 American Institute of Physics.
Original languageEnglish
JournalJournal of Applied Physics
Volume103
Issue number6
Pages (from-to)063706
ISSN0021-8979
DOIs
Publication statusPublished - 2008
Externally publishedYes

Cite this

Yu, Z. ; Aceves-Mijares, M. ; Monfil, K. ; Kiebach, Wolff-Ragnar ; López-Estopier, R. ; Carrillo, J. ; Yu, Z. / Room temperature current oscillations in naturally grown silicon nanocrystallites embedded in oxide films. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 6. pp. 063706.
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abstract = "Current oscillations and other abnormalities in the dark current-voltage characteristics of an aluminum/silicon-rich oxide (SRO)/silicon structure were observed at room temperature. The SRO layers in the devices were fabricated by low pressure chemical vapor deposition and postdeposition thermal annealing. The spikelike current oscillations and other abnormalities are interpreted by an alternative switching between the on and off states of the conduction paths through the Si nanocrystallites at proper biases. {\circledC} 2008 American Institute of Physics.",
author = "Z. Yu and M. Aceves-Mijares and K. Monfil and Wolff-Ragnar Kiebach and R. López-Estopier and J. Carrillo and Z. Yu",
year = "2008",
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journal = "Journal of Applied Physics",
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Yu, Z, Aceves-Mijares, M, Monfil, K, Kiebach, W-R, López-Estopier, R, Carrillo, J & Yu, Z 2008, 'Room temperature current oscillations in naturally grown silicon nanocrystallites embedded in oxide films', Journal of Applied Physics, vol. 103, no. 6, pp. 063706. https://doi.org/10.1063/1.2875397

Room temperature current oscillations in naturally grown silicon nanocrystallites embedded in oxide films. / Yu, Z.; Aceves-Mijares, M.; Monfil, K.; Kiebach, Wolff-Ragnar; López-Estopier, R.; Carrillo, J.; Yu, Z.

In: Journal of Applied Physics, Vol. 103, No. 6, 2008, p. 063706.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Room temperature current oscillations in naturally grown silicon nanocrystallites embedded in oxide films

AU - Yu, Z.

AU - Aceves-Mijares, M.

AU - Monfil, K.

AU - Kiebach, Wolff-Ragnar

AU - López-Estopier, R.

AU - Carrillo, J.

AU - Yu, Z.

PY - 2008

Y1 - 2008

N2 - Current oscillations and other abnormalities in the dark current-voltage characteristics of an aluminum/silicon-rich oxide (SRO)/silicon structure were observed at room temperature. The SRO layers in the devices were fabricated by low pressure chemical vapor deposition and postdeposition thermal annealing. The spikelike current oscillations and other abnormalities are interpreted by an alternative switching between the on and off states of the conduction paths through the Si nanocrystallites at proper biases. © 2008 American Institute of Physics.

AB - Current oscillations and other abnormalities in the dark current-voltage characteristics of an aluminum/silicon-rich oxide (SRO)/silicon structure were observed at room temperature. The SRO layers in the devices were fabricated by low pressure chemical vapor deposition and postdeposition thermal annealing. The spikelike current oscillations and other abnormalities are interpreted by an alternative switching between the on and off states of the conduction paths through the Si nanocrystallites at proper biases. © 2008 American Institute of Physics.

U2 - 10.1063/1.2875397

DO - 10.1063/1.2875397

M3 - Journal article

VL - 103

SP - 063706

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -