Review of Resonant Gate Driver in Power Conversion

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Abstract

Resonant gate driver is a vital trend of research topic along with the development of high electron mobility transistor (HEMT). Compared with conventional gate driver, resonant gate driver achieves much lower power dissipation during switching transient and widely viewed as one essential technique for high frequency power conversion. This paper provides a state-of-art review and thorough comparison of different resonant gate driver topologies. Case study of two representative topologies is carried out. Application of resonant gate driver in Gallium Nitride (GaN) HEMT is discussed.
Original languageEnglish
Title of host publicationProceedings of 2018 International Power Electronics Conference
PublisherIEEE
Publication date2018
Pages607-613
ISBN (Print)9784886864031
DOIs
Publication statusPublished - 2018
Event2018 International Power Electronics Conference - TOKI MESSE Niigata Convention Center, Niigata City, Japan
Duration: 20 May 201824 May 2018
http://www.ipec2018.org/

Conference

Conference2018 International Power Electronics Conference
LocationTOKI MESSE Niigata Convention Center
CountryJapan
CityNiigata City
Period20/05/201824/05/2018
Internet address

Keywords

  • Resonant gate driver
  • GaN HEMT
  • Power conversion

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