Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Dirch Hjorth Petersen; Ole Hansen; Torben M. Hansen; Peter Bøggild; Rong Lin; Daniel Kjær; P.F. Nielsen; T. Clarysse; W. Vandervorst; E. Rosseel; N.S. Bennett; N.E.B. Cowern

doi:10.1116/1.3224898

Review of electrical characterization of ultra-shallow junctions with micro four-point probes

Dirch Hjorth Petersen, Ole Hansen, Torben M. Hansen, Peter Bøggild, Rong Lin, Daniel Kjær, P.F. Nielsen, T. Clarysse, W. Vandervorst, E. Rosseel, N.S. Bennett, N.E.B. Cowern

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.

Original language	English
Journal	Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures
Volume	28
Issue number	1C
Pages (from-to)	27-33
ISSN	1071-1023
DOIs	https://doi.org/10.1116/1.3224898
Publication status	Published - 2010

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Petersen, D. H., Hansen, O., Hansen, T. M., Bøggild, P., Lin, R., Kjær, D., Nielsen, P. F., Clarysse, T., Vandervorst, W., Rosseel, E., Bennett, N. S., & Cowern, N. E. B. (2010). Review of electrical characterization of ultra-shallow junctions with micro four-point probes. Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, 28(1C), 27-33. https://doi.org/10.1116/1.3224898

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abstract = "Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.",

author = "Petersen, {Dirch Hjorth} and Ole Hansen and Hansen, {Torben M.} and Peter B{\o}ggild and Rong Lin and Daniel Kj{\ae}r and P.F. Nielsen and T. Clarysse and W. Vandervorst and E. Rosseel and N.S. Bennett and N.E.B. Cowern",

year = "2010",

doi = "10.1116/1.3224898",

language = "English",

volume = "28",

pages = "27--33",

journal = "Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures",

issn = "1071-1023",

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Petersen, DH, Hansen, O, Hansen, TM, Bøggild, P, Lin, R, Kjær, D, Nielsen, PF, Clarysse, T, Vandervorst, W, Rosseel, E, Bennett, NS & Cowern, NEB 2010, 'Review of electrical characterization of ultra-shallow junctions with micro four-point probes', Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, vol. 28, no. 1C, pp. 27-33. https://doi.org/10.1116/1.3224898

Review of electrical characterization of ultra-shallow junctions with micro four-point probes. / Petersen, Dirch Hjorth; Hansen, Ole; Hansen, Torben M. et al.
In: Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures, Vol. 28, No. 1C, 2010, p. 27-33.

Research output: Contribution to journal › Journal article › Research › peer-review

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AU - Petersen, Dirch Hjorth

AU - Hansen, Ole

AU - Hansen, Torben M.

AU - Bøggild, Peter

AU - Lin, Rong

AU - Kjær, Daniel

AU - Nielsen, P.F.

AU - Clarysse, T.

AU - Vandervorst, W.

AU - Rosseel, E.

AU - Bennett, N.S.

AU - Cowern, N.E.B.

PY - 2010

Y1 - 2010

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AB - Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional techniques will become even more evident. In several recent studies micro four-point probe (M4PP) has been demonstrated as a reliable high precision metrology method for both sheet resistance and Hall effect measurements of ultra-shallow implants and has revealed a promising potential for carrier profiling.

U2 - 10.1116/1.3224898

DO - 10.1116/1.3224898

M3 - Journal article

SN - 1071-1023

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JO - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B. Microelectronics and Nanometer Structures

IS - 1C

ER -

Review of electrical characterization of ultra-shallow junctions with micro four-point probes

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