Reversible and irreversible temperature-induced changes in exchange-biased planar Hall effect bridge (PHEB) magnetic field sensors

G. Rizzi, N.C. Lundtoft, F.W. Østerberg, M.F. Hansen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    We investigate the changes of planar Hall effect bridge magnetic field sensors upon exposure to temperatures between 25° C and 90°C. From analyses of the sensor response vs. magnetic fields we extract the exchange bias field Hex, the uniaxial anisotropy field HK and the anisotropic magnetoresistance (AMR) of the exchange biased thin film at a given temperature and by comparing measurements carried out at elevated temperatures T with measurements carried out at 25° C after exposure to T, we can separate the reversible from the irreversible changes of the sensor. The results are not only relevant for sensor applications but also demonstrate the method as a useful tool for characterizing exchange-biased thin films.
    Original languageEnglish
    Title of host publicationTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo
    Publication date2012
    Pages215-218
    Publication statusPublished - 2012
    EventNanotech 2012: Conference & Expo - Santa Clara Convention Center, Santa Clara, United States
    Duration: 18 Jun 201221 Jun 2012
    Conference number: 15

    Conference

    ConferenceNanotech 2012
    Number15
    LocationSanta Clara Convention Center
    CountryUnited States
    CitySanta Clara
    Period18/06/201221/06/2012

    Keywords

    • Anisotropy
    • Biosensors
    • Electric resistance
    • Exhibitions
    • Fabrication
    • Fluidics
    • Hall effect
    • Magnetic sensors
    • Magnetometers
    • Magnetoresistance
    • Thin films
    • Nanotechnology

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