Resonance Energy Transfer in Hybrid Devices in the Presence of a Surface

Research output: Contribution to journalJournal article – Annual report year: 2014Researchpeer-review

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We have studied room-temperature, nonradiative resonant energy transfer from InGaN/GaN quantum wells to CdSe/ZnS nanocrystals separated by aluminum oxide layers of different thicknesses. Nonradiative energy transfer from the quantum wells to the nanocrystals at separation distances of up to approximately 10 nm was observed. By comparing the carrier dynamics of the quantum wells and the nanocrystals, we
found that nonradiative recombination via surface states, generated during dry etching of the wafer, counteracts the nonradiative energy-transfer process to the nanocrystals and therefore decreases the process efficiency.
Original languageEnglish
JournalJournal of Physical Chemistry Part C: The Nanomaterials and Interfaces
Volume118
Pages (from-to)16284 − 16289
ISSN1932-7447
DOIs
Publication statusPublished - 2014
CitationsWeb of Science® Times Cited: No match on DOI

ID: 97949487