Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures

Dennis Christensen, Felix Trier, Yunzhong Chen, Anders Smith, Nini Pryds

Research output: Contribution to conferenceConference abstract for conferenceResearch

Abstract

Complex oxides have attracted a lot of interest recently as this class of material exhibits a plethora of remarkable properties. In particular, a great variety of properties is observed in the heterostructure composed of lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3). For instance, at the interface between the two insulating oxides LaAlO3 and SrTiO3 a high-mobility quasi-two-dimensional electron gas is formed if the thickness of LaAlO3 exceeds a critical value of 3 unit cells. At a thickness of 3 unit cells the interface remains insulating, however, an interface conductance can be induced by an electric field. It has previously been demonstrated that SrTiO3 heterostructures with amorphous LaAlO3 top layers can display interfacial conductivity with similar critical thickness dependence. Here, we report resistance switching of the interfacial conductance for SrTiO3 heterostructures with amorphous LaAlO3 top layers below the critical thickness in various controlled environments.
Original languageEnglish
Publication date2012
Publication statusPublished - 2012
Event19th Workshop on Oxide Electronics (WOE 19) - Palace ‘t Loo, Apeldoorn, Netherlands
Duration: 30 Sep 20123 Oct 2012

Conference

Conference19th Workshop on Oxide Electronics (WOE 19)
LocationPalace ‘t Loo
CountryNetherlands
CityApeldoorn
Period30/09/201203/10/2012

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