Resistance switching at the interface of LaAlO3/SrTiO3

Yunzhong Chen; J.L. Zhao; J.R. Sun; Nini Pryds; B.G. Shen

doi:10.1063/1.3490646

Resistance switching at the interface of LaAlO₃/SrTiO₃

Yunzhong Chen
, J.L. Zhao
, J.R. Sun
, Nini Pryds
, B.G. Shen

Chinese Academy of Sciences

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer. © 2010 American Institute of Physics

Original language	English
Article number	123102
Journal	Applied Physics Letters
Volume	97
Issue number	12
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3490646
Publication status	Published - 2010

Bibliographical note

Keywords

Magnetic refrigeration
Fuel Cells and Hydrogen

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10.1063/1.3490646

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Cite this

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title = "Resistance switching at the interface of LaAlO3/SrTiO3",

abstract = "At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer. {\textcopyright} 2010 American Institute of Physics",

keywords = "Magnetic refrigeration, Fuel Cells and Hydrogen, Magnetisk k{\o}ling, Br{\ae}ndselsceller og brint",

author = "Yunzhong Chen and J.L. Zhao and J.R. Sun and Nini Pryds and B.G. Shen",

note = "Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics",

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T1 - Resistance switching at the interface of LaAlO3/SrTiO3

AU - Chen, Yunzhong

AU - Zhao, J.L.

AU - Sun, J.R.

AU - Pryds, Nini

AU - Shen, B.G.

PY - 2010

Y1 - 2010

N2 - At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer. © 2010 American Institute of Physics

AB - At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer. © 2010 American Institute of Physics

KW - Magnetic refrigeration

KW - Fuel Cells and Hydrogen

KW - Magnetisk køling

KW - Brændselsceller og brint

U2 - 10.1063/1.3490646

DO - 10.1063/1.3490646

M3 - Journal article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 123102

ER -