Resistance switching at the interface of LaAlO3/SrTiO3

Yunzhong Chen, J.L. Zhao, J.R. Sun, Nini Pryds, B.G. Shen

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    At the interface of LaAlO3/SrTiO3 with film thickness of 3 unit cells or greater, a reproducible electric-field-induced bipolar resistance switching of the interfacial conduction is observed on nanometer scale by a biased conducting atomic force microscopy under vacuum environment. The switching behavior is suggested to be an intrinsic feature of the SrTiO3 single crystal substrates, which mainly originates from the modulation of oxygen ion transfer in SrTiO3 surface by external electric field in the vicinity of interface, whereas the LaAlO3 film acts as a barrier layer. © 2010 American Institute of Physics
    Original languageEnglish
    JournalApplied Physics Letters
    Issue number12
    Pages (from-to)123102
    Publication statusPublished - 2010

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    Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics


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