Research of Gap Filler Material in the GaN Transistor Thermal Management

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High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications
Original languageEnglish
Title of host publicationProceedings of 10th International Conference on Power Electronics
Number of pages6
PublisherIEEE
Publication date2019
Publication statusAccepted/In press - 2019
Event10th International Conference on Power Electronics – ECCE Asia - Busan Exhibition and Convention center, Busan, Korea, Republic of
Duration: 17 May 201931 May 2019
http://www.icpe2019.org/

Conference

Conference10th International Conference on Power Electronics – ECCE Asia
LocationBusan Exhibition and Convention center
CountryKorea, Republic of
CityBusan
Period17/05/201931/05/2019
Internet address

    Research areas

  • Thermal dissipation, GaN transistor, Gap filler, Thermal model
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