Research of Gap Filler Material in the GaN Transistor Thermal Management

Bainan Sun, Niels Elkjær Iversen, Zhe Zhang, Michael A. E. Andersen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

49 Downloads (Pure)

Abstract

High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications
Original languageEnglish
Title of host publicationProceedings of 10th International Conference on Power Electronics
Number of pages6
PublisherIEEE
ISBN (Print)9788957083130
Publication statusAccepted/In press - 2019
Event10th International Conference on Power Electronics – ECCE Asia - Busan Exhibition and Convention center, Busan, Korea, Republic of
Duration: 17 May 2019 → 31 May 2019
http://www.icpe2019.org/

Conference

Conference10th International Conference on Power Electronics – ECCE Asia
LocationBusan Exhibition and Convention center
CountryKorea, Republic of
CityBusan
Period17/05/2019 → 31/05/2019
Internet address

Keywords

  • Thermal dissipation
  • GaN transistor
  • Gap filler
  • Thermal model

Cite this

Sun, B., Iversen, N. E., Zhang, Z., & Andersen, M. A. E. (Accepted/In press). Research of Gap Filler Material in the GaN Transistor Thermal Management. In Proceedings of 10th International Conference on Power Electronics IEEE.
Sun, Bainan ; Iversen, Niels Elkjær ; Zhang, Zhe ; Andersen, Michael A. E. / Research of Gap Filler Material in the GaN Transistor Thermal Management. Proceedings of 10th International Conference on Power Electronics. IEEE, 2019.
@inproceedings{dc35dfac9533449ab87a4c8ad197a703,
title = "Research of Gap Filler Material in the GaN Transistor Thermal Management",
abstract = "High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications",
keywords = "Thermal dissipation, GaN transistor, Gap filler, Thermal model",
author = "Bainan Sun and Iversen, {Niels Elkj{\ae}r} and Zhe Zhang and Andersen, {Michael A. E.}",
year = "2019",
language = "English",
isbn = "9788957083130",
booktitle = "Proceedings of 10th International Conference on Power Electronics",
publisher = "IEEE",
address = "United States",

}

Sun, B, Iversen, NE, Zhang, Z & Andersen, MAE 2019, Research of Gap Filler Material in the GaN Transistor Thermal Management. in Proceedings of 10th International Conference on Power Electronics. IEEE, 10th International Conference on Power Electronics – ECCE Asia, Busan, Korea, Republic of, 17/05/2019.

Research of Gap Filler Material in the GaN Transistor Thermal Management. / Sun, Bainan; Iversen, Niels Elkjær; Zhang, Zhe; Andersen, Michael A. E.

Proceedings of 10th International Conference on Power Electronics. IEEE, 2019.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Research of Gap Filler Material in the GaN Transistor Thermal Management

AU - Sun, Bainan

AU - Iversen, Niels Elkjær

AU - Zhang, Zhe

AU - Andersen, Michael A. E.

PY - 2019

Y1 - 2019

N2 - High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications

AB - High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications

KW - Thermal dissipation

KW - GaN transistor

KW - Gap filler

KW - Thermal model

M3 - Article in proceedings

SN - 9788957083130

BT - Proceedings of 10th International Conference on Power Electronics

PB - IEEE

ER -

Sun B, Iversen NE, Zhang Z, Andersen MAE. Research of Gap Filler Material in the GaN Transistor Thermal Management. In Proceedings of 10th International Conference on Power Electronics. IEEE. 2019

Access to Document