Research of Gap Filler Material in the GaN Transistor Thermal Management

Bainan Sun; Niels Elkjær Iversen; Zhe Zhang; Michael A. E. Andersen

Research of Gap Filler Material in the GaN Transistor Thermal Management

Bainan Sun, Niels Elkjær Iversen, Zhe Zhang, Michael A. E. Andersen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications

Original language	English
Title of host publication	Proceedings of 10th International Conference on Power Electronics
Number of pages	6
Publisher	IEEE
Publication date	2019
Article number	8796905
ISBN (Print)	9788957083130
Publication status	Published - 2019
Event	10th International Conference on Power Electronics – ECCE Asia - Busan Exhibition and Convention center, Busan, Korea, Republic of Duration: 17 May 2019 → 31 May 2019 http://www.icpe2019.org/

Conference

Conference	10th International Conference on Power Electronics – ECCE Asia
Location	Busan Exhibition and Convention center
Country/Territory	Korea, Republic of
City	Busan
Period	17/05/2019 → 31/05/2019
Internet address	http://www.icpe2019.org/

Keywords

Thermal dissipation
GaN transistor
Gap filler
Thermal model

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@inproceedings{dc35dfac9533449ab87a4c8ad197a703,

title = "Research of Gap Filler Material in the GaN Transistor Thermal Management",

abstract = "High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications",

keywords = "Thermal dissipation, GaN transistor, Gap filler, Thermal model",

author = "Bainan Sun and Iversen, {Niels Elkj{\ae}r} and Zhe Zhang and Andersen, {Michael A. E.}",

year = "2019",

language = "English",

isbn = "9788957083130",

booktitle = "Proceedings of 10th International Conference on Power Electronics",

publisher = "IEEE",

address = "United States",

note = "10th International Conference on Power Electronics – ECCE Asia, ICPE 2019-ECCE ; Conference date: 17-05-2019 Through 31-05-2019",

url = "http://www.icpe2019.org/",

}

TY - GEN

T1 - Research of Gap Filler Material in the GaN Transistor Thermal Management

AU - Sun, Bainan

AU - Iversen, Niels Elkjær

AU - Zhang, Zhe

AU - Andersen, Michael A. E.

PY - 2019

Y1 - 2019

N2 - High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications

AB - High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications

KW - Thermal dissipation

KW - GaN transistor

KW - Gap filler

KW - Thermal model

M3 - Article in proceedings

SN - 9788957083130

BT - Proceedings of 10th International Conference on Power Electronics

PB - IEEE

T2 - 10th International Conference on Power Electronics – ECCE Asia

Y2 - 17 May 2019 through 31 May 2019

ER -

Research of Gap Filler Material in the GaN Transistor Thermal Management

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Conference

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