Research of Gap Filler Material in the GaN Transistor Thermal Management

Bainan Sun, Niels Elkjær Iversen, Zhe Zhang, Michael A. E. Andersen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    228 Downloads (Pure)

    Abstract

    High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications
    Original languageEnglish
    Title of host publicationProceedings of 10th International Conference on Power Electronics
    Number of pages6
    PublisherIEEE
    Publication date2019
    Article number8796905
    ISBN (Print)9788957083130
    Publication statusPublished - 2019
    Event10th International Conference on Power Electronics – ECCE Asia - Busan Exhibition and Convention center, Busan, Korea, Republic of
    Duration: 17 May 201931 May 2019
    http://www.icpe2019.org/

    Conference

    Conference10th International Conference on Power Electronics – ECCE Asia
    LocationBusan Exhibition and Convention center
    Country/TerritoryKorea, Republic of
    CityBusan
    Period17/05/201931/05/2019
    Internet address

    Keywords

    • Thermal dissipation
    • GaN transistor
    • Gap filler
    • Thermal model

    Fingerprint

    Dive into the research topics of 'Research of Gap Filler Material in the GaN Transistor Thermal Management'. Together they form a unique fingerprint.

    Cite this