Abstract
High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design. The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications
| Original language | English |
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| Title of host publication | Proceedings of 10th International Conference on Power Electronics |
| Number of pages | 6 |
| Publisher | IEEE |
| Publication date | 2019 |
| Article number | 8796905 |
| ISBN (Print) | 9788957083130 |
| Publication status | Published - 2019 |
| Event | 10th International Conference on Power Electronics – ECCE Asia - Busan Exhibition and Convention center, Busan, Korea, Republic of Duration: 17 May 2019 → 31 May 2019 http://www.icpe2019.org/ |
Conference
| Conference | 10th International Conference on Power Electronics – ECCE Asia |
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| Location | Busan Exhibition and Convention center |
| Country/Territory | Korea, Republic of |
| City | Busan |
| Period | 17/05/2019 → 31/05/2019 |
| Internet address |
Keywords
- Thermal dissipation
- GaN transistor
- Gap filler
- Thermal model