Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells

Carsten Thirstrup

doi:10.1109/3.387034

Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells

Carsten Thirstrup

Technical University of Denmark

Research output: Contribution to journal › Journal article › Research › peer-review

927 Downloads (Pure)

Abstract

The effect of excitons in GaInAs-InP coupled asymmetric quantum wells on the refractive index modulation, is analyzed numerically using a model based on the effective mass approximation. It is shown that two coupled quantum wells brought in resonance by an applied electric field will, due to the reduction in the exciton oscillator strengths, have a modulation of the refractive index which is more than one order of magnitude larger than in a similar quantum well structure based on the quantum confined Stark effect, but with no coupling between the quantum wells. Calculations show that combining this strong electrorefractive effect with self-photo-induced modulation in a biased-pin-diode modulator configuration, results in an optical nonlinearity with a figure of merit of 20 cm3/J at a wavelength of 1.55 μm. This value is large compared to optical nonlinearities originating from band edge resonance effects in III-V semiconductor materials

Original language	English
Journal	I E E E Journal of Quantum Electronics
Volume	31
Issue number	6
Pages (from-to)	988-996
ISSN	0018-9197
DOIs	https://doi.org/10.1109/3.387034
Publication status	Published - 1995

Bibliographical note

Copyright: 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Access to Document

10.1109/3.387034

ThirstrupFinal published version, 863 KB

OpenUrl availability

Full text

Cite this

@article{8768fb8810a34dd69cde896a62e71672,

title = "Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells",

abstract = "The effect of excitons in GaInAs-InP coupled asymmetric quantum wells on the refractive index modulation, is analyzed numerically using a model based on the effective mass approximation. It is shown that two coupled quantum wells brought in resonance by an applied electric field will, due to the reduction in the exciton oscillator strengths, have a modulation of the refractive index which is more than one order of magnitude larger than in a similar quantum well structure based on the quantum confined Stark effect, but with no coupling between the quantum wells. Calculations show that combining this strong electrorefractive effect with self-photo-induced modulation in a biased-pin-diode modulator configuration, results in an optical nonlinearity with a figure of merit of 20 cm3/J at a wavelength of 1.55 μm. This value is large compared to optical nonlinearities originating from band edge resonance effects in III-V semiconductor materials",

author = "Carsten Thirstrup",

note = "Copyright: 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE",

year = "1995",

doi = "10.1109/3.387034",

language = "English",

volume = "31",

pages = "988--996",

journal = "I E E E Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers",

number = "6",

}

TY - JOUR

T1 - Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells

AU - Thirstrup, Carsten

N1 - Copyright: 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 1995

Y1 - 1995

N2 - The effect of excitons in GaInAs-InP coupled asymmetric quantum wells on the refractive index modulation, is analyzed numerically using a model based on the effective mass approximation. It is shown that two coupled quantum wells brought in resonance by an applied electric field will, due to the reduction in the exciton oscillator strengths, have a modulation of the refractive index which is more than one order of magnitude larger than in a similar quantum well structure based on the quantum confined Stark effect, but with no coupling between the quantum wells. Calculations show that combining this strong electrorefractive effect with self-photo-induced modulation in a biased-pin-diode modulator configuration, results in an optical nonlinearity with a figure of merit of 20 cm3/J at a wavelength of 1.55 μm. This value is large compared to optical nonlinearities originating from band edge resonance effects in III-V semiconductor materials

AB - The effect of excitons in GaInAs-InP coupled asymmetric quantum wells on the refractive index modulation, is analyzed numerically using a model based on the effective mass approximation. It is shown that two coupled quantum wells brought in resonance by an applied electric field will, due to the reduction in the exciton oscillator strengths, have a modulation of the refractive index which is more than one order of magnitude larger than in a similar quantum well structure based on the quantum confined Stark effect, but with no coupling between the quantum wells. Calculations show that combining this strong electrorefractive effect with self-photo-induced modulation in a biased-pin-diode modulator configuration, results in an optical nonlinearity with a figure of merit of 20 cm3/J at a wavelength of 1.55 μm. This value is large compared to optical nonlinearities originating from band edge resonance effects in III-V semiconductor materials

U2 - 10.1109/3.387034

DO - 10.1109/3.387034

M3 - Journal article

SN - 0018-9197

VL - 31

SP - 988

EP - 996

JO - I E E E Journal of Quantum Electronics

JF - I E E E Journal of Quantum Electronics

IS - 6

ER -

Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells

Abstract

Bibliographical note

Access to Document

OpenUrl availability

Fingerprint

Cite this