Abstract
This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers, showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold. This sensitivity can be degraded by increasing the excited-to-ground-state energy separation, which results in a high excited-to-ground-state threshold ratio. In addition, the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor, which leads to a low critical feedback level. These findings illuminate a path to fabricate reflection-insensitive quantum dot lasers for isolator-free photonic integrated circuits.
| Original language | English |
|---|---|
| Journal | Photonics Research |
| Volume | 11 |
| Issue number | 10 |
| Pages (from-to) | 1713-1722 |
| ISSN | 2327-9125 |
| DOIs | |
| Publication status | Published - Oct 2023 |
Bibliographical note
Funding Information:National Key Research and Development Program of China (2022YFB2803600); National Natural Science Foundation of China (62204072, U22A2093); Basic and Applied Basic Research Foundation of Guangdong Province (2021A1515110076, 2023A1515012304); Shenzhen Science and Technology Innovation Program (GXWD20220811163623002, RCBS20210609103824050). We acknowledge Professor Dieter Bimberg from Technische Universität Berlin, Germany, and Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, China, for providing the high-quality QD laser sample.
Funding Information:
Funding. National Key Research and Development Program of China (2022YFB2803600); National Natural Science Foundation of China (62204072, U22A2093); Basic and Applied Basic Research Foundation of Guangdong Province (2021A1515110076, 2023A1515012304); Shenzhen Science and Technology Innovation Program (GXWD20220811163623002, RCBS20210609103824050).
Publisher Copyright:
© 2023 Chinese Laser Press.