Reexamination of the InSb(111) and GaSb(111) Structures: Comment on 'Disorder in the Reconstructed (111)2x2 Surfaces of InSb and GaSb' by A. Belzner, E. Ritter and H. Schultz

I.K. Robinson, J. Bohr, R. Feidenhans'l, M. Nielsen, F. Grey, R.L. Johnson

    Research output: Contribution to journalJournal articleResearch

    Abstract

    A recent article [Surface Sci. 209 (1989) 379] has attempted to improve the agreement between our original X-ray diffraction data [Phys. Rev. Letters 54 (1985) 1275; Surface Sci. 186 (1987) 499] and the proposed distorted vacancy model by the introduction of an additional, partially occupied atom in the unit cell. Here we show that almost as much improvement can be obtained by introducing second-layer displacements into the original structure. This raises questions of uniqueness in crystallographic structure determination and the level of detail attainable without overinterpretation of data.
    Original languageEnglish
    JournalSurface Science
    Volume217
    Issue number3
    Pages (from-to)L435-L440
    ISSN0039-6028
    DOIs
    Publication statusPublished - 1989

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