Abstract
We investigate charging effect in electron beam lithography for patterning resist on electrically insulating
substrate. We find that the charging effect can be mitigated without using a charge dissipation layer with an
optimized exposure writing order strategy. We successfully fabricate an AlGaAs-on-sapphire (AlGaAsOS)
miroresonator with intrinsic quality factor (Q) as ~180,000 with the optimized EBL process.
substrate. We find that the charging effect can be mitigated without using a charge dissipation layer with an
optimized exposure writing order strategy. We successfully fabricate an AlGaAs-on-sapphire (AlGaAsOS)
miroresonator with intrinsic quality factor (Q) as ~180,000 with the optimized EBL process.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 44th International Conference on Micro and Nano Engineering |
| Number of pages | 1 |
| Publisher | IEEE |
| Publication date | 2018 |
| Publication status | Published - 2018 |
| Event | 44th International conference on Micro and Nano Engineering - Copenhagen, Denmark Duration: 24 Sept 2018 → 27 Sept 2018 Conference number: 44 http://mne2018.org |
Conference
| Conference | 44th International conference on Micro and Nano Engineering |
|---|---|
| Number | 44 |
| Country/Territory | Denmark |
| City | Copenhagen |
| Period | 24/09/2018 → 27/09/2018 |
| Internet address |
Keywords
- Electron beam lithography
- Charging effect
- AlGaAs-on-insulator