Reducing insulating substrate charging in electron beam lithography without using charge dissipation layer

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Abstract

We investigate charging effect in electron beam lithography for patterning resist on electrically insulating
substrate. We find that the charging effect can be mitigated without using a charge dissipation layer with an
optimized exposure writing order strategy. We successfully fabricate an AlGaAs-on-sapphire (AlGaAsOS)
miroresonator with intrinsic quality factor (Q) as ~180,000 with the optimized EBL process.
Original languageEnglish
Title of host publicationProceedings of 44th International Conference on Micro and Nano Engineering
Number of pages1
PublisherIEEE
Publication date2018
Publication statusPublished - 2018
Event44th International conference on Micro and Nano Engineering - Copenhagen, Denmark
Duration: 24 Sep 201827 Sep 2018
Conference number: 44
http://mne2018.org

Conference

Conference44th International conference on Micro and Nano Engineering
Number44
CountryDenmark
CityCopenhagen
Period24/09/201827/09/2018
Internet address

Keywords

  • Electron beam lithography
  • Charging effect
  • AlGaAs-on-insulator

Cite this

Zheng, Y., Pu, M., & Yvind, K. (2018). Reducing insulating substrate charging in electron beam lithography without using charge dissipation layer. In Proceedings of 44th International Conference on Micro and Nano Engineering IEEE.