Recrystallization of epitaxial GaN under indentation

S. Dhara; C. R.  Das; H.C. Hsu; Baldev Raj; A.K. Bhaduri; L.C. Chen; K.H. Chen; S.K. Albert; Ayan Ray

doi:10.1063/1.2907851

Recrystallization of epitaxial GaN under indentation

S. Dhara
, C. R. Das
, H.C. Hsu
, Baldev Raj
, A.K. Bhaduri
, L.C. Chen
, K.H. Chen
, S.K. Albert
, Ayan Ray

National Cheng Kung University
Indira Gandhi Centre for Atomic Research
National Taiwan University
Academia Sinica Taiwan HQ
Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation. Hardness value is measured as ∼10 GPa using a Berkovich indenter. "Pop-in" burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2 (high) ∼570 cm-1 in the as-grown epi-GaN is redshifted to stress free value ∼567 cm-1 in the indented region. Evolution of A1 (TO) and E1 (TO) phonon modes are also reported to signify the recrystallization process. © 2008 American Institute of Physics.

Original language	English
Article number	143114
Journal	Applied Physics Letters
Volume	92
Issue number	14
Number of pages	4
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.2907851
Publication status	Published - 2008
Externally published	Yes

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@article{fa65e9c9072242aa8a732bad5e7d3ffa,

title = "Recrystallization of epitaxial GaN under indentation",

abstract = "We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation. Hardness value is measured as ∼10 GPa using a Berkovich indenter. {"}Pop-in{"} burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2 (high) ∼570 cm-1 in the as-grown epi-GaN is redshifted to stress free value ∼567 cm-1 in the indented region. Evolution of A1 (TO) and E1 (TO) phonon modes are also reported to signify the recrystallization process. {\textcopyright} 2008 American Institute of Physics.",

author = "S. Dhara and Das, \{C. R.\} and H.C. Hsu and Baldev Raj and A.K. Bhaduri and L.C. Chen and K.H. Chen and S.K. Albert and Ayan Ray",

year = "2008",

doi = "10.1063/1.2907851",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Recrystallization of epitaxial GaN under indentation

AU - Dhara, S.

AU - Das, C. R.

AU - Hsu, H.C.

AU - Raj, Baldev

AU - Bhaduri, A.K.

AU - Chen, L.C.

AU - Chen, K.H.

AU - Albert, S.K.

AU - Ray, Ayan

PY - 2008

Y1 - 2008

N2 - We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation. Hardness value is measured as ∼10 GPa using a Berkovich indenter. "Pop-in" burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2 (high) ∼570 cm-1 in the as-grown epi-GaN is redshifted to stress free value ∼567 cm-1 in the indented region. Evolution of A1 (TO) and E1 (TO) phonon modes are also reported to signify the recrystallization process. © 2008 American Institute of Physics.

AB - We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation. Hardness value is measured as ∼10 GPa using a Berkovich indenter. "Pop-in" burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2 (high) ∼570 cm-1 in the as-grown epi-GaN is redshifted to stress free value ∼567 cm-1 in the indented region. Evolution of A1 (TO) and E1 (TO) phonon modes are also reported to signify the recrystallization process. © 2008 American Institute of Physics.

U2 - 10.1063/1.2907851

DO - 10.1063/1.2907851

M3 - Journal article

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143114

ER -

Recrystallization of epitaxial GaN under indentation

Abstract

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