Recrystallization of epitaxial GaN under indentation

S. Dhara, C. R. Das, H.C. Hsu, Baldev Raj, A.K. Bhaduri, L.C. Chen, K.H. Chen, S.K. Albert, Ayan Ray

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation. Hardness value is measured as ∼10 GPa using a Berkovich indenter. "Pop-in" burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2 (high) ∼570 cm-1 in the as-grown epi-GaN is redshifted to stress free value ∼567 cm-1 in the indented region. Evolution of A1 (TO) and E1 (TO) phonon modes are also reported to signify the recrystallization process. © 2008 American Institute of Physics.
Original languageEnglish
Article number143114
JournalApplied Physics Letters
Volume92
Issue number14
Number of pages4
ISSN0003-6951
DOIs
Publication statusPublished - 2008
Externally publishedYes

Fingerprint Dive into the research topics of 'Recrystallization of epitaxial GaN under indentation'. Together they form a unique fingerprint.

Cite this