Abstract
Doping graphene by heteroatoms such as nitrogen presents an attractive route to control the position of the Fermi level in the material. We prepared N-doped graphene on Cu(111) and Ir(111) surfaces via chemical vapor deposition of two different molecules. Using scanning tunneling microscopy images as a benchmark, we show that the position of the dopant atoms can be determined using atomic force microscopy. Specifically, the frequency shift-distance curves Delta f(z) acquired above a N atom are significantly different from the curves measured over a C atom. Similar behavior was found for N-doped graphene on Cu(111) and Ir(111). The results are corroborated by density functional theory calculations employing a van der Waals functional.
Original language | English |
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Article number | 245430 |
Journal | Physical Review B |
Volume | 93 |
Issue number | 24 |
Number of pages | 9 |
ISSN | 0163-1829 |
DOIs | |
Publication status | Published - 2016 |
Keywords
- Solid surface structure
- Doping and implantation of impurities
- Chemical vapour deposition
- Density functional theory, local density approximation (condensed matter electronic structure)
- Preparation of graphene and graphene-related materials, intercalation compounds, and diamond
- Electronic structure of graphene and graphene-related materials (thin films, low dimensional and nanoscale structures)
- atomic force microscopy
- chemical vapour deposition
- density functional theory
- doping
- Fermi level
- graphene
- nitrogen
- scanning tunnelling microscopy
- van der Waals functional
- frequency shift–distance curves
- benchmark
- scanning tunneling microscopy images
- chemical vapor deposition
- N-doped graphene
- heteroatoms
- nitrogen dopant atoms