Random-field induced memory effects in inhomogeneously diluted antiferromagnets K2NixZn1−xF4

B. J. Dikken, A. F. M. Arts, H. W. de Wijn, Jørgen Kjems

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    Abstract

    Using neutron diffraction a random-field generated memory is observed in K2NixZn1−xF4 with x = 0.96, 0.85, and 0.75. The intensities and profiles of magnetic Bragg reflections are found to follow unique trajectories determined by switching the external magnetic field on and off while cooling. The effect, associated with a inhomogeneous spread in TN on a microscopic scale, is a direct manifestation of freezing in of multi-domain states at the ordering temperature.
    Original languageEnglish
    JournalSolid State Communications
    Volume57
    Issue number8
    Pages (from-to)627-630
    ISSN0038-1098
    Publication statusPublished - 1986

    Cite this

    Dikken, B. J., Arts, A. F. M., de Wijn, H. W., & Kjems, J. (1986). Random-field induced memory effects in inhomogeneously diluted antiferromagnets K2NixZn1−xF4. Solid State Communications, 57(8), 627-630.