Abstract
Experimental results from high-intensity gamma-irradiation of cuprous oxide are used to investigate the annealing of defects with increasing radiation dose. The results are analysed on the basis of the Balarin and Hauser (1965) statistical model of radiation annealing, giving a square-root relationship between the rate of change of resistivity and the resistivity change. The saturation defect density at room temperature is estimated on the basis of a model for defect creation in cuprous oxide.
Original language | English |
---|---|
Journal | Physica Status Solidi |
Volume | 14 |
Issue number | 2 |
Pages (from-to) | 287-290 |
ISSN | 0031-8957 |
DOIs | |
Publication status | Published - 1966 |