Abstract
Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum.
Original language | English |
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Journal | Nano letters |
Volume | 16 |
Issue number | 1 |
Pages (from-to) | 656-62 |
Number of pages | 7 |
ISSN | 1530-6984 |
DOIs | |
Publication status | Published - 2016 |
Keywords
- MOCVD
- Nanowire
- STEM-EDX
- light-emitting diodes
- quantum well
- radial