Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System

Alexander Berg, Sadegh Yazdi, Ali Nowzari, Kristian Storm, Vishal Jain, Neimantas Vainorius, Lars Samuelson, Jakob Birkedal Wagner, Magnus T Borgström

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    Abstract

    Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum.
    Original languageEnglish
    JournalNano letters
    Volume16
    Issue number1
    Pages (from-to)656-62
    Number of pages7
    ISSN1530-6984
    DOIs
    Publication statusPublished - 2016

    Keywords

    • MOCVD
    • Nanowire
    • STEM-EDX
    • light-emitting diodes
    • quantum well
    • radial

    Cite this

    Berg, A., Yazdi, S., Nowzari, A., Storm, K., Jain, V., Vainorius, N., Samuelson, L., Wagner, J. B., & Borgström, M. T. (2016). Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System. Nano letters, 16(1), 656-62. https://doi.org/10.1021/acs.nanolett.5b04401