Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum.
- light-emitting diodes
- quantum well
Berg, A., Yazdi, S., Nowzari, A., Storm, K., Jain, V., Vainorius, N., Samuelson, L., Wagner, J. B., & Borgström, M. T. (2016). Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System. Nano letters, 16(1), 656-62. https://doi.org/10.1021/acs.nanolett.5b04401