Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu; E.U. Rafailov; D. Livshits; Dmitry Turchinovich

Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu
, E.U. Rafailov
, D. Livshits
, Dmitry Turchinovich

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V.

Original language	English
Title of host publication	2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS)
Publisher	IEEE
Publication date	2010
Pages	1-2
ISBN (Print)	978-1-55752-890-2
Publication status	Published - 2010
Event	Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC) - San Jose, CA, United States Duration: 16 May 2010 → 21 May 2010 http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=17189

Conference

Conference	Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC)
Country/Territory	United States
City	San Jose, CA
Period	16/05/2010 → 21/05/2010
Internet address	http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=17189

Bibliographical note

Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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Cite this

@inproceedings{4715114a2abd46d0bc2d7aba7357d5e3,

title = "Quantum well saturable absorber mirror with electrical control of modulation depth",

abstract = "A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 \% to 1.63 \% by applying reverse bias voltage in the range 0{\textendash}1 V.",

author = "Xiaomin Liu and E.U. Rafailov and D. Livshits and Dmitry Turchinovich",

note = "Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.; Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC), CLEO/QELS 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

year = "2010",

language = "English",

isbn = "978-1-55752-890-2",

pages = "1--2",

booktitle = "2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS)",

publisher = "IEEE",

address = "United States",

url = "http://www.ieee.org/conferences\_events/conferences/conferencedetails/index.html?Conf\_ID=17189",

}

Liu, X, Rafailov, EU, Livshits, D & Turchinovich, D 2010, Quantum well saturable absorber mirror with electrical control of modulation depth. in 2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS). IEEE, pp. 1-2, Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC), San Jose, CA, United States, 16/05/2010. <http://www.cleoconference.org/>

Quantum well saturable absorber mirror with electrical control of modulation depth. / Liu, Xiaomin; Rafailov, E.U.; Livshits, D. et al.
2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS). IEEE, 2010. p. 1-2.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Quantum well saturable absorber mirror with electrical control of modulation depth

AU - Liu, Xiaomin

AU - Rafailov, E.U.

AU - Livshits, D.

AU - Turchinovich, Dmitry

N1 - Copyright 2010 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 2010

Y1 - 2010

N2 - A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V.

AB - A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0–1 V.

M3 - Article in proceedings

SN - 978-1-55752-890-2

SP - 1

EP - 2

BT - 2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS)

PB - IEEE

T2 - Conference on Lasers and Electro‐Optics (CLEO)/International Quantum Electronics Conference (IQEC)

Y2 - 16 May 2010 through 21 May 2010

ER -

Quantum well saturable absorber mirror with electrical control of modulation depth

Abstract

Conference

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